5秒后页面跳转
7RC1HCB104MVR0405M PDF预览

7RC1HCB104MVR0405M

更新时间: 2024-10-28 20:00:59
品牌 Logo 应用领域
三和 - SAMWHA 电容器
页数 文件大小 规格书
1页 71K
描述
Aluminum Electrolytic Capacitor, Polarized, Aluminum (wet), 50V, 20% +Tol, 20% -Tol, 0.1uF, Surface Mount, 5.5 MMH CHIP

7RC1HCB104MVR0405M 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:,
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.77电容:0.1 µF
电容器类型:ALUMINUM ELECTROLYTIC CAPACITOR介电材料:ALUMINUM (WET)
JESD-609代码:e3漏电流:0.003 mA
安装特点:SURFACE MOUNT负容差:20%
端子数量:2最高工作温度:105 °C
最低工作温度:-55 °C封装形状:CYLINDRICAL PACKAGE
包装方法:TR极性:POLARIZED
正容差:20%额定(直流)电压(URdc):50 V
纹波电流:2.3 mA表面贴装:YES
Delta切线:0.11端子面层:Tin (Sn)
端子形状:WRAPAROUNDBase Number Matches:1

7RC1HCB104MVR0405M 数据手册

  

与7RC1HCB104MVR0405M相关器件

型号 品牌 获取价格 描述 数据表
7RC1HCB334MVR0305M SAMWHA

获取价格

Aluminum Electrolytic Capacitor, Polarized, Aluminum (wet), 50V, 20% +Tol, 20% -Tol, 0.33u
7RC1HCB334MVR0405M SAMWHA

获取价格

Aluminum Electrolytic Capacitor, Polarized, Aluminum (wet), 50V, 20% +Tol, 20% -Tol, 0.33u
7RJK1525DPF RENESAS

获取价格

Silicon N Channel MOS FET High Speed Power Switching
7RJK1535DPF RENESAS

获取价格

Silicon N Channel MOS FET High Speed Power Switching
7RO/223 SSDI

获取价格

Rectifier Diode, 2 Element, 1A, 70V V(RRM), Silicon,
7RO/52 ETC

获取价格

1 AMP EPION II HIGH SPEED RECTIFIER
7RO/5CT SSDI

获取价格

Rectifier Diode, 2 Element, 1A, 70V V(RRM), Silicon, TO-5,
7RQB-T0T120G BEL

获取价格

DC-DC Regulated Power Supply Module, ROHS COMPLIANT, QUARTER-BRICK, PACKAGE-8
7RQB-T0T12LG BEL

获取价格

DC-DC Regulated Power Supply Module, ROHS COMPLIANT, QUARTER-BRICK, PACKAGE-8
7RS101F66A20A IDT

获取价格

RISC Microprocessor, 32-Bit, 20MHz, 6.500 X 3.700 INCH, PLUG IN MODULE