是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | DIP | 包装说明: | DIP, DIP14,.3 |
针数: | 14 | Reach Compliance Code: | compliant |
HTS代码: | 8542.39.00.01 | 风险等级: | 7.91 |
系列: | HCT | JESD-30 代码: | R-PDIP-T14 |
JESD-609代码: | e4 | 长度: | 19.025 mm |
负载电容(CL): | 50 pF | 逻辑集成电路类型: | AND GATE |
最大I(ol): | 0.0052 A | 功能数量: | 4 |
输入次数: | 2 | 端子数量: | 14 |
最高工作温度: | 125 °C | 最低工作温度: | -40 °C |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | DIP |
封装等效代码: | DIP14,.3 | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 包装方法: | TUBE |
峰值回流温度(摄氏度): | 260 | 电源: | 5 V |
Prop。Delay @ Nom-Sup: | 36 ns | 传播延迟(tpd): | 36 ns |
认证状态: | Not Qualified | 施密特触发器: | NO |
座面最大高度: | 4.2 mm | 子类别: | Gates |
最大供电电压 (Vsup): | 5.5 V | 最小供电电压 (Vsup): | 4.5 V |
标称供电电压 (Vsup): | 5 V | 表面贴装: | NO |
技术: | CMOS | 温度等级: | AUTOMOTIVE |
端子面层: | Nickel/Palladium/Gold (Ni/Pd/Au) | 端子形式: | THROUGH-HOLE |
端子节距: | 2.54 mm | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 30 | 宽度: | 7.62 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
SN74HCT08PWR | TI |
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