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74AUP1G386GW PDF预览

74AUP1G386GW

更新时间: 2024-02-11 19:22:41
品牌 Logo 应用领域
安世 - NEXPERIA 光电二极管逻辑集成电路石英晶振
页数 文件大小 规格书
16页 250K
描述
Low-power 3-input EXCLUSIVE-OR gateProduction

74AUP1G386GW 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Transferred零件包装代码:SOT-363
包装说明:TSSOP, TSSOP6,.08针数:6
Reach Compliance Code:compliantHTS代码:8542.39.00.01
风险等级:5.47Is Samacsys:N
系列:AUP/ULP/VJESD-30 代码:R-PDSO-G6
JESD-609代码:e3长度:2 mm
负载电容(CL):30 pF逻辑集成电路类型:XOR GATE
最大I(ol):0.0017 A湿度敏感等级:1
功能数量:1输入次数:3
端子数量:6最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TSSOP6,.08
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
包装方法:TAPE AND REEL峰值回流温度(摄氏度):260
电源:1.2/3.3 VProp。Delay @ Nom-Sup:22.1 ns
传播延迟(tpd):22.1 ns认证状态:Not Qualified
施密特触发器:NO座面最大高度:1.1 mm
子类别:Gates最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):0.8 V标称供电电压 (Vsup):1.1 V
表面贴装:YES技术:CMOS
温度等级:AUTOMOTIVE端子面层:Tin (Sn)
端子形式:GULL WING端子节距:0.65 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
宽度:1.25 mmBase Number Matches:1

74AUP1G386GW 数据手册

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Nexperia  
74AUP1G386  
Low-power 3-input EXCLUSIVE-OR gate  
9. Recommended operating conditions  
Table 6. Recommended operating conditions  
Symbol Parameter  
Conditions  
Min  
0.8  
0
Max  
3.6  
Unit  
V
VCC  
VI  
supply voltage  
input voltage  
output voltage  
3.6  
V
VO  
Active mode  
0
VCC  
3.6  
V
Power-down mode; VCC = 0 V  
0
V
Tamb  
ambient temperature  
-40  
0
+125 °C  
200 ns/V  
Δt/ΔV  
input transition rise and fall rate  
VCC = 0.8 V to 3.6 V  
10. Static characteristics  
Table 7. Static characteristics  
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).  
Symbol Parameter  
Tamb = 25 °C  
Conditions  
Min  
Typ  
Max  
Unit  
VIH  
HIGH-level input voltage  
VCC = 0.8 V  
0.70 × VCC  
-
-
-
-
-
-
-
-
-
V
V
V
V
V
V
V
V
VCC = 0.9 V to 1.95 V  
0.65 × VCC  
-
VCC = 2.3 V to 2.7 V  
1.6  
-
VCC = 3.0 V to 3.6 V  
2.0  
-
VIL  
LOW-level input voltage  
HIGH-level output voltage  
VCC = 0.8 V  
-
-
-
-
0.30 × VCC  
0.35 × VCC  
0.7  
VCC = 0.9 V to 1.95 V  
VCC = 2.3 V to 2.7 V  
VCC = 3.0 V to 3.6 V  
0.9  
VOH  
VI = VIH or VIL  
IO = -20 μA; VCC = 0.8 V to 3.6 V  
IO = -1.1 mA; VCC = 1.1 V  
IO = -1.7 mA; VCC = 1.4 V  
IO = -1.9 mA; VCC = 1.65 V  
IO = -2.3 mA; VCC = 2.3 V  
IO = -3.1 mA; VCC = 2.3 V  
IO = -2.7 mA; VCC = 3.0 V  
IO = -4.0 mA; VCC = 3.0 V  
VI = VIH or VIL  
VCC - 0.1  
0.75 × VCC  
1.11  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V
V
V
V
V
V
V
1.32  
2.05  
1.9  
2.72  
2.6  
VOL  
LOW-level output voltage  
IO = 20 μA; VCC = 0.8 V to 3.6 V  
IO = 1.1 mA; VCC = 1.1 V  
IO = 1.7 mA; VCC = 1.4 V  
IO = 1.9 mA; VCC = 1.65 V  
IO = 2.3 mA; VCC = 2.3 V  
IO = 3.1 mA; VCC = 2.3 V  
IO = 2.7 mA; VCC = 3.0 V  
IO = 4.0 mA; VCC = 3.0 V  
VI = GND to 3.6 V; VCC = 0 V to 3.6 V  
VI or VO = 0 V to 3.6 V; VCC = 0 V  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.1  
0.3 × VCC  
0.31  
V
V
V
0.31  
V
0.31  
V
0.44  
V
0.31  
V
0.44  
V
II  
input leakage current  
±0.1  
μA  
μA  
IOFF  
power-off leakage current  
±0.2  
©
74AUP1G386  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2022. All rights reserved  
Product data sheet  
Rev. 8 — 21 January 2022  
4 / 16  
 
 

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