5秒后页面跳转
74AUP1G386GW-G PDF预览

74AUP1G386GW-G

更新时间: 2024-01-10 08:03:22
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
16页 86K
描述
Low-power 3-input EXCLUSIVE-OR gate

74AUP1G386GW-G 技术参数

Source Url Status Check Date:2013-06-14 00:00:00是否无铅: 含铅
是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:unknown风险等级:5.76
Base Number Matches:1

74AUP1G386GW-G 数据手册

 浏览型号74AUP1G386GW-G的Datasheet PDF文件第2页浏览型号74AUP1G386GW-G的Datasheet PDF文件第3页浏览型号74AUP1G386GW-G的Datasheet PDF文件第4页浏览型号74AUP1G386GW-G的Datasheet PDF文件第5页浏览型号74AUP1G386GW-G的Datasheet PDF文件第6页浏览型号74AUP1G386GW-G的Datasheet PDF文件第7页 
74AUP1G386  
Low-power 3-input EXCLUSIVE-OR gate  
Rev. 03 — 2 July 2009  
Product data sheet  
1. General description  
The 74AUP1G386 provides a single 3-input EXCLUSIVE-OR gate.  
Schmitt trigger action at all inputs makes the circuit tolerant to slower input rise and fall  
times across the entire VCC range from 0.8 V to 3.6 V.  
This device ensures a very low static and dynamic power consumption across the entire  
VCC range from 0.8 V to 3.6 V.  
This device is fully specified for partial power-down applications using IOFF  
.
The IOFF circuitry disables the output, preventing the damaging backflow current through  
the device when it is powered down.  
2. Features  
I Wide supply voltage range from 0.8 V to 3.6 V  
I High noise immunity  
I Complies with JEDEC standards:  
N JESD8-12 (0.8 V to 1.3 V)  
N JESD8-11 (0.9 V to 1.65 V)  
N JESD8-7 (1.2 V to 1.95 V)  
N JESD8-5 (1.8 V to 2.7 V)  
N JESD8-B (2.7 V to 3.6 V)  
I ESD protection:  
N HBM JESD22-A114E Class 3A exceeds 5000 V  
N MM JESD22-A115-A exceeds 200 V  
N CDM JESD22-C101C exceeds 1000 V  
I Low static power consumption; ICC = 0.9 µA (maximum)  
I Latch-up performance exceeds 100 mA per JESD 78 Class II  
I Inputs accept voltages up to 3.6 V  
I Low noise overshoot and undershoot < 10 % of VCC  
I IOFF circuitry provides partial Power-down mode operation  
I Multiple package options  
I Specified from 40 °C to +85 °C and 40 °C to +125 °C  

与74AUP1G386GW-G相关器件

型号 品牌 描述 获取价格 数据表
74AUP1G38GF NXP Low-power 2-input NAND gate (open drain)

获取价格

74AUP1G38GM NXP Low-power 2-input NAND gate (open drain)

获取价格

74AUP1G38GM NEXPERIA Low-power 2-input NAND gate (open drain)Production

获取价格

74AUP1G38GM,115 NXP 74AUP1G38 - Low-power 2-input NAND-gate (open drain) SON 6-Pin

获取价格

74AUP1G38GM,132 NXP 74AUP1G38 - Low-power 2-input NAND-gate (open drain) SON 6-Pin

获取价格

74AUP1G38GM-H NXP 暂无描述

获取价格