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74AUP1G02GW PDF预览

74AUP1G02GW

更新时间: 2023-09-03 20:28:37
品牌 Logo 应用领域
安世 - NEXPERIA 光电二极管逻辑集成电路
页数 文件大小 规格书
18页 273K
描述
Low-power 2-input NOR gateProduction

74AUP1G02GW 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:TSSOP, TSSOP5/6,.08Reach Compliance Code:unknown
风险等级:5.74Is Samacsys:N
JESD-30 代码:R-PDSO-G5负载电容(CL):30 pF
逻辑集成电路类型:NOR GATE最大I(ol):0.0017 A
端子数量:5最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TSSOP5/6,.08
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
电源:1.2/3.3 VProp。Delay @ Nom-Sup:19.9 ns
认证状态:Not Qualified施密特触发器:NO
子类别:Gates表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子形式:GULL WING端子节距:0.635 mm
端子位置:DUALBase Number Matches:1

74AUP1G02GW 数据手册

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74AUP1G02  
Low-power 2-input NOR gate  
Rev. 10.1 — 11 July 2023  
Product data sheet  
1. General description  
The 74AUP1G02 is a single 2-input NOR gate. Schmitt-trigger action at all inputs makes the circuit  
tolerant of slower input rise and fall times. This device ensures very low static and dynamic power  
consumption across the entire VCC range from 0.8 V to 3.6 V. This device is fully specified for  
partial power down applications using IOFF. The IOFF circuitry disables the output, preventing the  
potentially damaging backflow current through the device when it is powered down.  
2. Features and benefits  
Wide supply voltage range from 0.8 V to 3.6 V  
CMOS low power dissipation  
High noise immunity  
Overvoltage tolerant inputs to 3.6 V  
Low noise overshoot and undershoot < 10 % of VCC  
IOFF circuitry provides partial Power-down mode operation  
Latch-up performance exceeds 100 mA per JESD 78 Class II  
Low static power consumption; ICC = 0.9 μA (maximum)  
Complies with JEDEC standards:  
JESD8-12 (0.8 V to 1.3 V)  
JESD8-11 (0.9 V to 1.65 V)  
JESD8-7 (1.2 V to 1.95 V)  
JESD8-5 (1.8 V to 2.7 V)  
JESD8-B (2.7 V to 3.6 V)  
ESD protection:  
HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 5000 V  
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V  
Multiple package options  
Specified from -40 °C to +85 °C and -40 °C to +125 °C  
 
 

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