5秒后页面跳转
74AUP1G04GM PDF预览

74AUP1G04GM

更新时间: 2024-11-24 06:31:51
品牌 Logo 应用领域
恩智浦 - NXP 栅极逻辑集成电路光电二极管
页数 文件大小 规格书
18页 95K
描述
Low-power inverter

74AUP1G04GM 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:SON包装说明:VSON, SOLCC6,.04,20
针数:6Reach Compliance Code:compliant
HTS代码:8542.39.00.01风险等级:5.29
系列:AUP/ULP/VJESD-30 代码:R-PDSO-N6
JESD-609代码:e3长度:1.45 mm
负载电容(CL):30 pF逻辑集成电路类型:INVERTER
最大I(ol):0.0017 A湿度敏感等级:1
功能数量:1输入次数:1
端子数量:6最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:VSON封装等效代码:SOLCC6,.04,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, VERY THIN PROFILE
包装方法:TAPE AND REEL峰值回流温度(摄氏度):260
电源:1.2/3.3 VProp。Delay @ Nom-Sup:16 ns
传播延迟(tpd):20.9 ns认证状态:Not Qualified
施密特触发器:NO座面最大高度:0.5 mm
子类别:Gates最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):0.8 V标称供电电压 (Vsup):1.1 V
表面贴装:YES技术:CMOS
温度等级:AUTOMOTIVE端子面层:Tin (Sn)
端子形式:NO LEAD端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
宽度:1 mmBase Number Matches:1

74AUP1G04GM 数据手册

 浏览型号74AUP1G04GM的Datasheet PDF文件第2页浏览型号74AUP1G04GM的Datasheet PDF文件第3页浏览型号74AUP1G04GM的Datasheet PDF文件第4页浏览型号74AUP1G04GM的Datasheet PDF文件第5页浏览型号74AUP1G04GM的Datasheet PDF文件第6页浏览型号74AUP1G04GM的Datasheet PDF文件第7页 
74AUP1G04  
Low-power inverter  
Rev. 03 — 5 November 2009  
Product data sheet  
1. General description  
The 74AUP1G04 provides the single inverting buffer.  
Schmitt trigger action at all inputs makes the circuit tolerant to slower input rise and fall  
times across the entire VCC range from 0.8 V to 3.6 V.  
This device ensures a very low static and dynamic power consumption across the entire  
VCC range from 0.8 V to 3.6 V.  
This device is fully specified for partial Power-down applications using IOFF  
.
The IOFF circuitry disables the output, preventing the damaging backflow current through  
the device when it is powered down.  
2. Features  
I Wide supply voltage range from 0.8 V to 3.6 V  
I High noise immunity  
I Complies with JEDEC standards:  
N JESD8-12 (0.8 V to 1.3 V)  
N JESD8-11 (0.9 V to 1.65 V)  
N JESD8-7 (1.2 V to 1.95 V)  
N JESD8-5 (1.8 V to 2.7 V)  
N JESD8-B (2.7 V to 3.6 V)  
I ESD protection:  
N HBM JESD22-A114F Class 3A exceeds 5000 V  
N MM JESD22-A115-A exceeds 200 V  
N CDM JESD22-C101C exceeds 1000 V  
I Low static power consumption; ICC = 0.9 µA (maximum)  
I Latch-up performance exceeds 100 mA per JESD 78B Class II  
I Inputs accept voltages up to 3.6 V  
I Low noise overshoot and undershoot < 10 % of VCC  
I IOFF circuitry provides partial Power-down mode operation  
I Multiple package options  
I Specified from 40 °C to +85 °C and 40 °C to +125 °C  

与74AUP1G04GM相关器件

型号 品牌 获取价格 描述 数据表
74AUP1G04GM,184 NXP

获取价格

Inverter, AUP/ULP/V Series, 1-Func, 1-Input, CMOS, PDSO6
74AUP1G04GM-H NXP

获取价格

IC AUP/ULP/V SERIES, 1-INPUT INVERT GATE, PDSO6, 1 X 1.45 MM, 0.50 MM HEIGHT, PLASTIC, MO-
74AUP1G04GN NXP

获取价格

IC AUP/ULP/V SERIES, 1-INPUT INVERT GATE, PDSO6, 0.90 X 1 MM, 0.35 MM HEIGHT, SOT-1115, SO
74AUP1G04GN NEXPERIA

获取价格

Low-power inverterProduction
74AUP1G04GS NEXPERIA

获取价格

Low-power inverterProduction
74AUP1G04GV NXP

获取价格

Low-power inverter
74AUP1G04GV NEXPERIA

获取价格

Low-power inverterProduction
74AUP1G04GV,125 NXP

获取价格

74AUP1G04 - Low-power inverter TSOP 5-Pin
74AUP1G04GV-Q100 NEXPERIA

获取价格

Low-power inverter
74AUP1G04GW NXP

获取价格

Low-power inverter