Datasheet > 71V546S133PF

71V546S133PF

更新时间： 2023-08-15 00:00:00

品牌	Logo	应用领域
艾迪悌 - IDT		静态存储器
页数	文件大小	规格书
21页	997K
描述
ZBT SRAM, 128KX36, 4.2ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, TQFP-100

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71V546S133PF 数据手册

IDT71V546, 128K x 36, 3.3V Synchronous SRAM with

ZBT™ Feature, Burst Counter and Pipelined Outputs

Commercial and Industrial Temperature Ranges

AbsoluteMaximumRatings⁽¹⁾

RecommendedDCOperating

Conditions

Commercial &

Symbol

Rating

Unit

Industrial Values

Symbol

Parameter

Min. Typ.

Max.

3.465

Unit

(2)

TERM

Terminal Voltage

with Respect to GND

-0.5 to +4.6

(3)

Supply Voltage

3.135 3.3

Ground

(3)

TERM

Terminal Voltage

-0.5 to VDD+0.5

0 to +70

with Respect to GND

____

Input High Voltage - Inputs

Input High Voltage - I/O

Input Low Voltage

2.0

4.6

Commercial

Operating Ambient

Temperature

2.0

DD+0.3⁽²⁾

____

^oC

-0.5⁽¹⁾

0.8

T ⁽⁴⁾

Industrial

Operating Ambient

Temperature

3821 tbl 04

NOTES:

-40 to +85

1. VIL (min.) = –1.0V for pulse width less than tCYC/2, once per cycle.

2. VIH (max.) = +6.0V for pulse width less than tCYC/2, once per cycle.

3. VDD needs to be ramped up smoothly to the operating level. If there are any

glitches on VDD that cause the voltage level to drop below 2.0 volts then the

device needs to be reset by holding VDD to 0.0 volts for a minimum of 100 ms.

BIAS

Temperature Under Bias

Storage Temperature

Power Dissipation

-55 to +125

2.0

^oC

TSTG

OUT

DC Output Current

RecommendedOperating

TemperatureandSupplyVoltage

Ambient

3821 tbl 05

NOTES:

1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS

may cause permanent damage to the device. This is a stress rating only

and functional operation of the device at these or any other conditions above

those indicated in the operational sections of this specification is not implied.

Exposure to absolute maximum rating conditions for extended periods may

affect reliability.

2. VDD and Input terminals only.

3. I/O terminals.

4. During production testing, the case temperature equals the ambient temperature.

Grade

Temperature⁽¹⁾

0^OC to +70^OC

-40^OC to +85^OC

VSS

VDD

Commercial

Industrial

3.3V±5%

3821 tbl 03

NOTES:

1. During production testing, the case temperature equals the ambient temperature.

100TQFPCapacitance

(TA = +25°C, f = 1.0MHz, TQFP package)

Symbol

Parameter⁽¹⁾

Input Capacitance

I/O Capacitance

Conditions

IN = 3dV

OUT = 3dV

Max. Unit

CIN

CI/O

3821 tbl 06

NOTE:

1. This parameter is guaranteed by device characterization, but not production tested.

6.42

1 2 3 456 7 8...21

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