是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | LCC |
包装说明: | QCCN, | 针数: | 84 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.32.00.41 | 风险等级: | 5.67 |
Is Samacsys: | N | 最长访问时间: | 35 ns |
JESD-30 代码: | S-PQCC-N84 | JESD-609代码: | e3 |
内存密度: | 262144 bit | 内存集成电路类型: | DUAL-PORT SRAM |
内存宽度: | 16 | 功能数量: | 1 |
端子数量: | 84 | 字数: | 16384 words |
字数代码: | 16000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 70 °C | 最低工作温度: | |
组织: | 16KX16 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | QCCN | 封装形状: | SQUARE |
封装形式: | CHIP CARRIER | 并行/串行: | PARALLEL |
峰值回流温度(摄氏度): | 260 | 认证状态: | Not Qualified |
最大供电电压 (Vsup): | 3.6 V | 最小供电电压 (Vsup): | 3 V |
标称供电电压 (Vsup): | 3.3 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | COMMERCIAL |
端子面层: | MATTE TIN | 端子形式: | NO LEAD |
端子位置: | QUAD | 处于峰值回流温度下的最长时间: | 30 |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
70V26WL55GG | IDT |
获取价格 |
Dual-Port SRAM, 16KX16, 55ns, CMOS, CBGA84, 1.120 X 1.120 INCH, 0.160 INCH HEIGHT, CERAMIC | |
70V26WL55JG | IDT |
获取价格 |
Dual-Port SRAM, 16KX16, 55ns, CMOS, PQCC84, 1.150 X 1.150 INCH, 0.170 INCH HEIGHT, PLASTIC | |
70V26WS25GG | IDT |
获取价格 |
Dual-Port SRAM, 16KX16, 25ns, CMOS, CBGA84, 1.120 X 1.120 INCH, 0.160 INCH HEIGHT, CERAMIC | |
70V26WS25GGI | IDT |
获取价格 |
Dual-Port SRAM, 16KX16, 35ns, CMOS, CBGA84, 1.120 X 1.120 INCH, 0.160 INCH HEIGHT, CERAMIC | |
70V26WS25JGI | IDT |
获取价格 |
Dual-Port SRAM, 16KX16, 35ns, CMOS, PQCC84, 1.150 X 1.150 INCH, 0.170 INCH HEIGHT, PLASTIC | |
70V26WS35GG | IDT |
获取价格 |
Dual-Port SRAM, 16KX16, 35ns, CMOS, CBGA84, 1.120 X 1.120 INCH, 0.160 INCH HEIGHT, CERAMIC | |
70V26WS55GG | IDT |
获取价格 |
Dual-Port SRAM, 16KX16, 55ns, CMOS, CBGA84, 1.120 X 1.120 INCH, 0.160 INCH HEIGHT, CERAMIC | |
70V26WS55JG | IDT |
获取价格 |
Dual-Port SRAM, 16KX16, 55ns, CMOS, PQCC84, 1.150 X 1.150 INCH, 0.170 INCH HEIGHT, PLASTIC | |
70V27 | RENESAS |
获取价格 |
32K x 16 3.3V Dual-Port RAM | |
70V27L15BF | IDT |
获取价格 |
CABGA-144, Tray |