是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | LCC |
包装说明: | QCCN, | 针数: | 84 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.32.00.41 | 风险等级: | 5.67 |
最长访问时间: | 55 ns | JESD-30 代码: | S-PQCC-N84 |
JESD-609代码: | e3 | 内存密度: | 262144 bit |
内存集成电路类型: | DUAL-PORT SRAM | 内存宽度: | 16 |
功能数量: | 1 | 端子数量: | 84 |
字数: | 16384 words | 字数代码: | 16000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 70 °C |
最低工作温度: | 组织: | 16KX16 | |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | QCCN |
封装形状: | SQUARE | 封装形式: | CHIP CARRIER |
并行/串行: | PARALLEL | 峰值回流温度(摄氏度): | 260 |
认证状态: | Not Qualified | 最大供电电压 (Vsup): | 3.6 V |
最小供电电压 (Vsup): | 3 V | 标称供电电压 (Vsup): | 3.3 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | COMMERCIAL | 端子面层: | MATTE TIN |
端子形式: | NO LEAD | 端子位置: | QUAD |
处于峰值回流温度下的最长时间: | 30 | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
70V26WS25GG | IDT |
获取价格 |
Dual-Port SRAM, 16KX16, 25ns, CMOS, CBGA84, 1.120 X 1.120 INCH, 0.160 INCH HEIGHT, CERAMIC | |
70V26WS25GGI | IDT |
获取价格 |
Dual-Port SRAM, 16KX16, 35ns, CMOS, CBGA84, 1.120 X 1.120 INCH, 0.160 INCH HEIGHT, CERAMIC | |
70V26WS25JGI | IDT |
获取价格 |
Dual-Port SRAM, 16KX16, 35ns, CMOS, PQCC84, 1.150 X 1.150 INCH, 0.170 INCH HEIGHT, PLASTIC | |
70V26WS35GG | IDT |
获取价格 |
Dual-Port SRAM, 16KX16, 35ns, CMOS, CBGA84, 1.120 X 1.120 INCH, 0.160 INCH HEIGHT, CERAMIC | |
70V26WS55GG | IDT |
获取价格 |
Dual-Port SRAM, 16KX16, 55ns, CMOS, CBGA84, 1.120 X 1.120 INCH, 0.160 INCH HEIGHT, CERAMIC | |
70V26WS55JG | IDT |
获取价格 |
Dual-Port SRAM, 16KX16, 55ns, CMOS, PQCC84, 1.150 X 1.150 INCH, 0.170 INCH HEIGHT, PLASTIC | |
70V27 | RENESAS |
获取价格 |
32K x 16 3.3V Dual-Port RAM | |
70V27L15BF | IDT |
获取价格 |
CABGA-144, Tray | |
70V27L15BFG | IDT |
获取价格 |
HIGH-SPEED 3.3V 32K x 16 DUAL-PORT STATIC RAM | |
70V27L15BFG8 | IDT |
获取价格 |
HIGH-SPEED 3.3V 32K x 16 DUAL-PORT STATIC RAM |