5秒后页面跳转
70V16L20PFI8 PDF预览

70V16L20PFI8

更新时间: 2024-11-24 14:46:55
品牌 Logo 应用领域
艾迪悌 - IDT 静态存储器内存集成电路
页数 文件大小 规格书
18页 163K
描述
Dual-Port SRAM, 16KX9, 20ns, CMOS, PQFP80, 14 X 14 MM, 1.40 MM HEIGHT, TQFP-80

70V16L20PFI8 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Obsolete包装说明:14 X 14 MM, 1.40 MM HEIGHT, TQFP-80
Reach Compliance Code:not_compliant风险等级:5.92
Is Samacsys:N最长访问时间:20 ns
I/O 类型:COMMONJESD-30 代码:S-PQFP-G80
JESD-609代码:e0内存密度:147456 bit
内存集成电路类型:DUAL-PORT SRAM内存宽度:9
湿度敏感等级:3功能数量:1
端口数量:2端子数量:80
字数:16384 words字数代码:16000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:16KX9
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:QFP封装等效代码:QFP80,.64SQ
封装形状:SQUARE封装形式:FLATPACK
并行/串行:PARALLEL峰值回流温度(摄氏度):240
电源:3.3 V认证状态:Not Qualified
最大待机电流:0.005 A最小待机电流:3 V
子类别:SRAMs最大压摆率:0.195 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn85Pb15)端子形式:GULL WING
端子节距:0.635 mm端子位置:QUAD
处于峰值回流温度下的最长时间:20Base Number Matches:1

70V16L20PFI8 数据手册

 浏览型号70V16L20PFI8的Datasheet PDF文件第2页浏览型号70V16L20PFI8的Datasheet PDF文件第3页浏览型号70V16L20PFI8的Datasheet PDF文件第4页浏览型号70V16L20PFI8的Datasheet PDF文件第5页浏览型号70V16L20PFI8的Datasheet PDF文件第6页浏览型号70V16L20PFI8的Datasheet PDF文件第7页 
HIGH-SPEED 3.3V  
16/8K X 9 DUAL-PORT  
STATIC RAM  
IDT70V16/5S/L  
Features  
True Dual-Ported memory cells which allow simultaneous  
reads of the same memory location  
High-speed access  
more using the Master/Slave select when cascading more  
than one device  
M/S = VIH for BUSY output flag on Master  
M/S = VIL for BUSY input on Slave  
Busy and Interrupt Flag  
On-chip port arbitration logic  
– Commercial:15/20/25ns(max.)  
– Industrial: 20ns (max.)  
Low-power operation  
– IDT70V16/5S  
Full on-chip hardware support of semaphore signaling  
between ports  
Active:430mW(typ.)  
Standby: 3.3mW (typ.)  
– IDT70V16/5L  
Fully asynchronous operation from either port  
LVTTL-compatible, single 3.3V (+0.3V) power supply  
Available in 68-pin PLCC and an 80-pin TQFP  
Industrial temperature range (–40°C to +85°C) is available  
for selected speeds  
Active:415mW(typ.)  
Standby:660µW(typ.)  
IDT70V16/5 easily expands data bus width to 18 bits or  
FunctionalBlockDiagram  
OEL  
OER  
CER  
CEL  
R/WR  
R/W  
L
I/O0L- I/O8L  
I/O0R-I/O8R  
I/O  
I/O  
Control  
Control  
BUSY (2,3)  
L
(2,3)  
BUSY  
R
(1)  
13L  
(1)  
A
A
13R  
Address  
Decoder  
MEMORY  
ARRAY  
Address  
Decoder  
A
0R  
A0L  
14  
14  
ARBITRATION  
INTERRUPT  
SEMAPHORE  
LOGIC  
CE  
OE  
L
L
CE  
OE  
R/W  
R
R
R
R/W  
L
SEM  
L
SEM  
R
M/S  
(3)  
(3)  
INTL  
INT  
R
5669 drw 01  
NOTES:  
1. A13 is a NC for IDT70V15.  
2. In MASTER mode: BUSY is an output and is a push-pull driver  
In SLAVE mode: BUSY is input.  
3. BUSY outputs and INT outputs are non-tri-stated push-pull drivers.  
OCTOBER 2004  
1
DSC 5669/2  
©2004 IntegratedDeviceTechnology,Inc.  

与70V16L20PFI8相关器件

型号 品牌 获取价格 描述 数据表
70V16L25PFG IDT

获取价格

Dual-Port SRAM, 16KX9, 25ns, CMOS, PQFP80, 14 X 14 MM, 1.40 MM HEIGHT, TQFP-80
70V16S17J8 IDT

获取价格

PLCC-68, Reel
70V16S17PF8 IDT

获取价格

TQFP-80, Reel
70V16S20BFI IDT

获取价格

CABGA-100, Tray
70V16S20JI8 IDT

获取价格

Dual-Port SRAM, 16KX9, 20ns, CMOS, PQCC68, 0.950 X 0.950 INCH, 0.170 INCH HEIGHT, PLASTIC,
70V16S20PFG IDT

获取价格

Dual-Port SRAM, 16KX9, 20ns, CMOS, PQFP80, 14 X 14 MM, 1.40 MM HEIGHT, TQFP-80
70V16S20PFGI IDT

获取价格

Dual-Port SRAM, 16KX9, 20ns, CMOS, PQFP80, 14 X 14 MM, 1.40 MM HEIGHT, TQFP-80
70V16S20PFI8 IDT

获取价格

Dual-Port SRAM, 16KX9, 20ns, CMOS, PQFP80, 14 X 14 MM, 1.40 MM HEIGHT, TQFP-80
70V16S25BF IDT

获取价格

CABGA-100, Tray
70V16S25BFI IDT

获取价格

CABGA-100, Tray