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70V08L20PFGI PDF预览

70V08L20PFGI

更新时间: 2024-11-06 00:41:31
品牌 Logo 应用领域
艾迪悌 - IDT 静态存储器内存集成电路
页数 文件大小 规格书
21页 662K
描述
HIGH-SPEED 3.3V 64K x 8 DUAL-PORT STATIC RAM

70V08L20PFGI 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TQFP
包装说明:LFQFP, QFP100,.63SQ,20针数:100
Reach Compliance Code:compliantECCN代码:3A991.B.2.B
HTS代码:8542.32.00.41风险等级:5.18
Samacsys Description:TQFP 14.0 X 14.0 X 1.4 MM最长访问时间:20 ns
I/O 类型:COMMONJESD-30 代码:S-PQFP-G100
JESD-609代码:e3长度:14 mm
内存密度:524288 bit内存集成电路类型:DUAL-PORT SRAM
内存宽度:8湿度敏感等级:3
功能数量:1端口数量:2
端子数量:100字数:65536 words
字数代码:64000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:64KX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:LFQFP
封装等效代码:QFP100,.63SQ,20封装形状:SQUARE
封装形式:FLATPACK, LOW PROFILE, FINE PITCH并行/串行:PARALLEL
峰值回流温度(摄氏度):260电源:3.3 V
认证状态:Not Qualified座面最大高度:1.6 mm
最大待机电流:0.006 A最小待机电流:3 V
子类别:SRAMs最大压摆率:0.28 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Matte Tin (Sn) - annealed端子形式:GULL WING
端子节距:0.5 mm端子位置:QUAD
处于峰值回流温度下的最长时间:30宽度:14 mm
Base Number Matches:1

70V08L20PFGI 数据手册

 浏览型号70V08L20PFGI的Datasheet PDF文件第2页浏览型号70V08L20PFGI的Datasheet PDF文件第3页浏览型号70V08L20PFGI的Datasheet PDF文件第4页浏览型号70V08L20PFGI的Datasheet PDF文件第5页浏览型号70V08L20PFGI的Datasheet PDF文件第6页浏览型号70V08L20PFGI的Datasheet PDF文件第7页 
IDT70V08S/L  
HIGH-SPEED 3.3V  
64K x 8 DUAL-PORT  
STATIC RAM  
Features  
IDT70V08 easily expands data bus width to 16 bits or  
True Dual-Ported memory cells which allow simultaneous  
access of the same memory location  
High-speed access  
more using the Master/Slave select when cascading more  
than one device  
M/S = VIH for BUSY output flag on Master,  
M/S = VIL for BUSY input on Slave  
– Commercial:15/20/25/35ns(max.)  
– Industrial: 20ns (max.)  
Busy and Interrupt Flags  
Low-power operation  
On-chip port arbitration logic  
– IDT70V08S  
Full on-chip hardware support of semaphore signaling  
between ports  
Active: 550mW (typ.)  
Standby: 5mW (typ.)  
Fully asynchronous operation from either port  
LVTTL-compatible, single 3.3V (±0.3V) power supply  
Available in a 100-pin TQFP  
– IDT70V08L  
Active: 550mW (typ.)  
Standby: 1mW (typ.)  
Industrial temperature range (–40°C to +85°C) is available  
for selected speeds  
Dual chip enables allow for depth expansion without  
external logic  
Green parts available, see ordering information  
Functional Block Diagram  
R/WL  
CE0L  
CE1L  
R/WR  
CE0  
R
CE1R  
OEL  
OER  
I/O  
Control  
I/O  
Control  
0-7L  
I/O  
0-7R  
I/O  
(1,2)  
(1,2)  
R
BUSY  
L
BUSY  
64Kx8  
MEMORY  
ARRAY  
70V08  
A
15L  
A
A
15R  
0R  
Address  
Decoder  
Address  
Decoder  
A
0L  
A15L  
A15R  
A0L  
CE 0L  
CE1L  
A0R  
ARBITRATION  
INTERRUPT  
SEMAPHORE  
LOGIC  
CE0R  
CE1R  
OER  
OEL  
R/WL  
R/WR  
SEM  
INT  
L
L
SEM  
R
(2)  
(2)  
INT  
R
M/S(1)  
3740 drw 01  
NOTES:  
1. BUSY is an input as a Slave (M/S-VIL) and an output when it is a Master (M/S-VIH).  
2. BUSY and INT are non-tri-state totem-pole outputs (push-pull).  
FEBRUARY 2015  
1
DSC-3740/9  
©2015 Integrated Device Technology, Inc.  

70V08L20PFGI 替代型号

型号 品牌 替代类型 描述 数据表
70V08L20PFGI8 IDT

完全替代

HIGH-SPEED 3.3V 64K x 8 DUAL-PORT STATIC RAM

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