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70V08L20PFGI8 PDF预览

70V08L20PFGI8

更新时间: 2024-11-25 00:41:31
品牌 Logo 应用领域
艾迪悌 - IDT 静态存储器内存集成电路
页数 文件大小 规格书
21页 662K
描述
HIGH-SPEED 3.3V 64K x 8 DUAL-PORT STATIC RAM

70V08L20PFGI8 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TQFP
包装说明:LFQFP, QFP100,.63SQ,20针数:100
Reach Compliance Code:compliantECCN代码:3A991.B.2.B
HTS代码:8542.32.00.41风险等级:5.29
最长访问时间:20 nsI/O 类型:COMMON
JESD-30 代码:S-PQFP-G100JESD-609代码:e3
长度:14 mm内存密度:524288 bit
内存集成电路类型:DUAL-PORT SRAM内存宽度:8
湿度敏感等级:3功能数量:1
端口数量:2端子数量:100
字数:65536 words字数代码:64000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:64KX8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:LFQFP封装等效代码:QFP100,.63SQ,20
封装形状:SQUARE封装形式:FLATPACK, LOW PROFILE, FINE PITCH
并行/串行:PARALLEL峰值回流温度(摄氏度):260
电源:3.3 V认证状态:Not Qualified
座面最大高度:1.6 mm最大待机电流:0.006 A
最小待机电流:3 V子类别:SRAMs
最大压摆率:0.28 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Matte Tin (Sn) - annealed
端子形式:GULL WING端子节距:0.5 mm
端子位置:QUAD处于峰值回流温度下的最长时间:30
宽度:14 mmBase Number Matches:1

70V08L20PFGI8 数据手册

 浏览型号70V08L20PFGI8的Datasheet PDF文件第2页浏览型号70V08L20PFGI8的Datasheet PDF文件第3页浏览型号70V08L20PFGI8的Datasheet PDF文件第4页浏览型号70V08L20PFGI8的Datasheet PDF文件第5页浏览型号70V08L20PFGI8的Datasheet PDF文件第6页浏览型号70V08L20PFGI8的Datasheet PDF文件第7页 
IDT70V08S/L  
HIGH-SPEED 3.3V  
64K x 8 DUAL-PORT  
STATIC RAM  
Features  
IDT70V08 easily expands data bus width to 16 bits or  
True Dual-Ported memory cells which allow simultaneous  
access of the same memory location  
High-speed access  
more using the Master/Slave select when cascading more  
than one device  
M/S = VIH for BUSY output flag on Master,  
M/S = VIL for BUSY input on Slave  
– Commercial:15/20/25/35ns(max.)  
– Industrial: 20ns (max.)  
Busy and Interrupt Flags  
Low-power operation  
On-chip port arbitration logic  
– IDT70V08S  
Full on-chip hardware support of semaphore signaling  
between ports  
Active: 550mW (typ.)  
Standby: 5mW (typ.)  
Fully asynchronous operation from either port  
LVTTL-compatible, single 3.3V (±0.3V) power supply  
Available in a 100-pin TQFP  
– IDT70V08L  
Active: 550mW (typ.)  
Standby: 1mW (typ.)  
Industrial temperature range (–40°C to +85°C) is available  
for selected speeds  
Dual chip enables allow for depth expansion without  
external logic  
Green parts available, see ordering information  
Functional Block Diagram  
R/WL  
CE0L  
CE1L  
R/WR  
CE0  
R
CE1R  
OEL  
OER  
I/O  
Control  
I/O  
Control  
0-7L  
I/O  
0-7R  
I/O  
(1,2)  
(1,2)  
R
BUSY  
L
BUSY  
64Kx8  
MEMORY  
ARRAY  
70V08  
A
15L  
A
A
15R  
0R  
Address  
Decoder  
Address  
Decoder  
A
0L  
A15L  
A15R  
A0L  
CE 0L  
CE1L  
A0R  
ARBITRATION  
INTERRUPT  
SEMAPHORE  
LOGIC  
CE0R  
CE1R  
OER  
OEL  
R/WL  
R/WR  
SEM  
INT  
L
L
SEM  
R
(2)  
(2)  
INT  
R
M/S(1)  
3740 drw 01  
NOTES:  
1. BUSY is an input as a Slave (M/S-VIL) and an output when it is a Master (M/S-VIH).  
2. BUSY and INT are non-tri-state totem-pole outputs (push-pull).  
FEBRUARY 2015  
1
DSC-3740/9  
©2015 Integrated Device Technology, Inc.  

70V08L20PFGI8 替代型号

型号 品牌 替代类型 描述 数据表
70V08L20PFGI IDT

完全替代

HIGH-SPEED 3.3V 64K x 8 DUAL-PORT STATIC RAM

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