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70P254L40BYI PDF预览

70P254L40BYI

更新时间: 2024-02-13 20:03:43
品牌 Logo 应用领域
艾迪悌 - IDT 静态存储器内存集成电路
页数 文件大小 规格书
14页 111K
描述
Application Specific SRAM, 8KX16, 40ns, CMOS, PBGA81, 0.50 MM PITCH, BGA-81

70P254L40BYI 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:BGA, BGA81,9X9,20
Reach Compliance Code:not_compliant风险等级:5.69
最长访问时间:40 nsI/O 类型:COMMON
JESD-30 代码:S-PBGA-B81JESD-609代码:e0
内存密度:131072 bit内存集成电路类型:APPLICATION SPECIFIC SRAM
内存宽度:16功能数量:1
端口数量:2端子数量:81
字数:8192 words字数代码:8000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:8KX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:BGA封装等效代码:BGA81,9X9,20
封装形状:SQUARE封装形式:GRID ARRAY
并行/串行:PARALLEL峰值回流温度(摄氏度):225
电源:1.8 V认证状态:Not Qualified
最大待机电流:0.000006 A子类别:SRAMs
最大压摆率:0.04 mA最大供电电压 (Vsup):1.9 V
最小供电电压 (Vsup):1.7 V标称供电电压 (Vsup):1.8 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:TIN LEAD
端子形式:BALL端子节距:0.5 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:30
Base Number Matches:1

70P254L40BYI 数据手册

 浏览型号70P254L40BYI的Datasheet PDF文件第5页浏览型号70P254L40BYI的Datasheet PDF文件第6页浏览型号70P254L40BYI的Datasheet PDF文件第7页浏览型号70P254L40BYI的Datasheet PDF文件第9页浏览型号70P254L40BYI的Datasheet PDF文件第10页浏览型号70P254L40BYI的Datasheet PDF文件第11页 
IDT70P264/254/244L  
Datasheet  
Low Power 1.8V 16K/8K/4K x 16 Dual-Port Static RAM  
Industrial Temperature Range  
AC Electrical Characteristics Over the  
OperatingTemperatureandSupplyVoltageRange(2)  
70P264/254/244  
Ind'l Only  
40ns  
55ns  
Symbol  
Parameter  
Min.  
Max.  
Min.  
Max.  
Unit  
READ CYCLE  
____  
____  
t
RC  
AA  
ACE  
ABE  
AOE  
OH  
LZ  
HZ  
PU  
PD  
Read Cycle Time  
40  
55  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
____  
____  
t
Address Access Time  
40  
40  
40  
55  
55  
55  
____  
____  
____  
____  
____  
____  
t
Chip Enable Access Time  
Byte Enable Access Time  
Output Enable Access Time  
Output Hold from Address Change  
Output Low-Z Time(1,3)  
t
t
25  
30  
____  
____  
t
5
5
____  
____  
t
5
5
Output High-Z Time(1,3)  
10  
25  
____  
____  
t
t
Chip Enable to Power Up Time(1)  
Chip Disable to Power Down Time(1)  
0
0
____  
____  
____  
____  
t
40  
55  
ns  
7148 tbl 11  
NOTES:  
1. This parameter is guaranteed by device characterization, but is not production tested.  
2. The specification for tDH must be met by the device supplying write data to the SRAM under all operating conditions. Although tDH and tOW values will vary over  
voltage and temperature, the actual tDH will always be smaller than the actual tOW.  
3. At any given temperature and voltage condition, tHZ is less than tLZ for any given device.  
6.42  
8

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