Datasheet > 70MT060WHTAPBF

70MT060WHTAPBF

更新时间： 2024-01-29 16:48:12

品牌	Logo	应用领域
威世 - VISHAY		双极性晶体管
页数	文件大小	规格书
9页	153K
描述
'Half Bridge' IGBT MTP (Warp 2 Speed IGBT), 70 A

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70MT060WHTAPBF 数据手册

70MT060WHTAPbF

Vishay Semiconductors

www.vishay.com

THERMISTOR SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX. UNITS

(1)

Resistance

R₀

T₀= 25 °C

k

Sensitivity index of the

thermistor material

T₀= 25 °C

T₁= 85 °C

 ⁽¹⁾⁽²⁾

4000

Notes

(1)

T₀, T₁are thermistor´s temperatures







(2)

-----

----- = exp  ----- –

, temperature in Kelvin



DIODE SPECIFICATIONS (T_J= 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP. MAX. UNITS

I_C= 70 A, V_GE= 0 V

1.64

2.1

2.4

Diode forward voltage drop

V_FM

I_C= 140 A, V_GE= 0 V

I_C= 70 A, V_GE= 0 V, T_J= 150 °C

1.69

1.9

Diode reverse recovery time

Diode peak reverse current

Diode recovery charge

t_rr

I_rr

126

12.8

750

194

V_CC= 200 V, I_C= 70 A

dI/dt = 200 A/μs

9.4

Q_rr

t_rr

440

140

Diode reverse recovery time

Diode peak reverse current

Diode recovery charge

V_CC= 200 V, I_C= 70 A

dI/dt = 200 A/μs

T_J= 125 °C

I_rr

Q_rr

950

1700

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

- 40

TYP.

MAX. UNITS

IGBT, Diode

Thermistor

150

Operating junction

temperature range

T_J

125

0.36

0.8

°C

Storage temperature range

Junction to case

T_Stg

IGBT

R_thJC

R_thCS

Diode

°C/W

Case to sink per module

Heatsink compound thermal conductivity = 1 W/mK

0.06

A mounting compound is recommended and the

torque should be checked after 3 hours to allow for

the spread of the compound. Lubricated threads.

Mounting torque to heatsink

Weight

10 %

Revision: 05-Jul-11

Document Number: 94469

For technical questions, contact: indmodules@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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