Datasheet > 70MT060WHTAPBF

70MT060WHTAPBF

更新时间： 2024-01-10 17:32:02

品牌	Logo	应用领域
威世 - VISHAY		双极性晶体管
页数	文件大小	规格书
9页	153K
描述
'Half Bridge' IGBT MTP (Warp 2 Speed IGBT), 70 A

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70MT060WHTAPBF 数据手册

70MT060WHTAPbF

Vishay Semiconductors

www.vishay.com

ELECTRICAL SPECIFICATIONS (T_J= 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX. UNITS

Collector to emitter breakdown voltage V_(BR)CES

V_GE= 0 V, I_C= 500 μA

600

2.1

2.8

2.7

V_GE= 15 V, I_C= 70 A

V_GE= 15 V, I_C= 140 A

V_GE= 15 V, I_C= 70 A, T_J= 150 °C

I_C= 0.5 mA

2.4

3.4

Collector to emitter voltage

V_CE(on)

Gate threshold voltage

V_GE(th)

I_CES

V_GE= 0 V, I_C= 600 V

0.7

250

Collector to emitter leaking current

Gate to emitter leakage current

_GE= 0 V, I_C= 600 V, T_J= 150 °C

I_GES

V_GE20 V

SWITCHING CHARACTERISTICS (T_J= 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

460

160

MAX. UNITS

Total gate charge (turn-on)

Gate to emitter charge (turn-on)

Gate to collector charge (turn-on)

Turn-on switching loss

Turn-off switching loss

Total switching loss

Turn-on switching loss

Turn-off switching loss

Total switching loss

Turn-on delay time

Rise time

Q_g

690

I_C= 70 A

Q_ge

Q_gc

E_on

E_off

E_ts

250

V_CC= 480 V

_GE= 15 V

130

R_g= 10 

_C= 70 A, V_CC= 480 V, V_GE= 15 V, L = 200 μH

Energy losses include tail and diode reverse

recovery, T_J= 25 °C

1.1

0.9

R_g= 10 

E_on

E_off

E_ts

1.27

1.13

2.4

314

I_C= 70 A, V_CC= 480 V, V_GE= 15 V, L = 200 μH

Energy losses include tail and diode reverse

recovery, T_J= 150 °C

td_on

t_r

R_g= 10 

_C= 70 A, V_CC= 480 V, V_GE= 15 V, L = 200 μH

Energy losses include tail and diode reverse

recovery

Turn-off delay time

Fail time

td_off

t_f

308

Turn-on delay time

Rise time

td_on

t_r

312

R_g= 10 

I_C= 70 A, V_CC= 480 V, V_GE= 15 V, L = 200 μH

Energy losses include tail and diode reverse

recovery, T_J= 150 °C

Turn-off delay time

Fail time

td_off

t_f

320

Input capacitance

Output capacitane

Reverse transfer capacitance

C_ies

C_oes

C_res

8000

790

110

V_GE= 0 V

V_CC= 30 V

f = 1.0 MHz

T_J= 150 °C, I_C= 300 A

Reverse BIAS safe operating area

RBSOA

_CC= 400 V, V_P= 600 V

Fullsquare

R_g= 22 , V_GE= + 15 V to 0 V

Revision: 05-Jul-11

Document Number: 94469

For technical questions, contact: indmodules@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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