70MT060WSP
Vishay Semiconductors
www.vishay.com
MTP IGBT Power Module Primary Rectifier and PFC
FEATURES
• Input rectifier bridge
• PFC stage with warp 2 IGBT and FRED Pt®
hyperfast diode
• Very low stray inductance design for high
speed operation
• Integrated thermistor
• Isolated baseplate
MTP
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for industrial level
PRODUCT SUMMARY
BENEFITS
INPUT BRIDGE DIODE, TJ = 150 °C
• Lower conduction losses and switching losses
• Higher switching frequency up to 150 kHz
• Optimized for welding, UPS, and SMPS applications
• PCB solderable terminals
VRRM
1200 V
48 A
l
O at 80 °C
V
FM at 25 °C at 20 A
1.05 V
PFC IGBT, TJ = 150 °C
VCES
CE(sat) at 25 °C at 40 A
600 V
1.93 V
66 A
• Direct mounting to heatsink
V
I
C at 80°C
FRED Pt® PFC DIODE, TJ = 150 °C
VR
600 V
55 A
I
F(DC) at 80 °C
VF at 25 °C at 40 A
1.76 V
FRED Pt® AP DIODE, TJ = 150 °C
VR
600 V
13 A
IF(DC) at 80 °C
VF at 25 °C at 4 A
1.1 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
UNITS
Repetitive peak reverse voltage
VRRM
1200
V
Maximum average output current
TJ = 150 °C maximum
Input
Rectifier
Bridge
IO
TC = 80 °C
48
A
Surge current (Non-repetitive)
Maximum I2t for fusing
IFSM
I2t
Rated VRRM applied
10 ms, sine pulse
TJ = 25 °C
250
316
600
20
A2s
V
Collector to emitter voltage
Gate to emitter voltage
VCES
VGE
IGES max. 250 ns
TC = 25 °C
96
Maximum continuous collector current
at VGE = 15 V, TJ = 150 °C maximum
IC
PFC IGBT
TC = 80 °C
66
A
(1)
Pulsed collector current
ICM
250
250
378
Clamped inductive load current
Maximum power dissipation
ILM
PD
TC = 25 °C
W
Revision: 07-Sep-11
Document Number: 93410
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000