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70MT060WSP PDF预览

70MT060WSP

更新时间: 2022-05-20 00:17:10
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12页 181K
描述
MTP IGBT Power Module Primary Rectifier and PFC

70MT060WSP 数据手册

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70MT060WSP  
Vishay Semiconductors  
www.vishay.com  
MTP IGBT Power Module Primary Rectifier and PFC  
FEATURES  
• Input rectifier bridge  
• PFC stage with warp 2 IGBT and FRED Pt®  
hyperfast diode  
• Very low stray inductance design for high  
speed operation  
• Integrated thermistor  
• Isolated baseplate  
MTP  
• Compliant to RoHS Directive 2002/95/EC  
• Designed and qualified for industrial level  
PRODUCT SUMMARY  
BENEFITS  
INPUT BRIDGE DIODE, TJ = 150 °C  
• Lower conduction losses and switching losses  
• Higher switching frequency up to 150 kHz  
• Optimized for welding, UPS, and SMPS applications  
• PCB solderable terminals  
VRRM  
1200 V  
48 A  
l
O at 80 °C  
V
FM at 25 °C at 20 A  
1.05 V  
PFC IGBT, TJ = 150 °C  
VCES  
CE(sat) at 25 °C at 40 A  
600 V  
1.93 V  
66 A  
• Direct mounting to heatsink  
V
I
C at 80°C  
FRED Pt® PFC DIODE, TJ = 150 °C  
VR  
600 V  
55 A  
I
F(DC) at 80 °C  
VF at 25 °C at 40 A  
1.76 V  
FRED Pt® AP DIODE, TJ = 150 °C  
VR  
600 V  
13 A  
IF(DC) at 80 °C  
VF at 25 °C at 4 A  
1.1 V  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MAX.  
UNITS  
Repetitive peak reverse voltage  
VRRM  
1200  
V
Maximum average output current  
TJ = 150 °C maximum  
Input  
Rectifier  
Bridge  
IO  
TC = 80 °C  
48  
A
Surge current (Non-repetitive)  
Maximum I2t for fusing  
IFSM  
I2t  
Rated VRRM applied  
10 ms, sine pulse  
TJ = 25 °C  
250  
316  
600  
20  
A2s  
V
Collector to emitter voltage  
Gate to emitter voltage  
VCES  
VGE  
IGES max. 250 ns  
TC = 25 °C  
96  
Maximum continuous collector current  
at VGE = 15 V, TJ = 150 °C maximum  
IC  
PFC IGBT  
TC = 80 °C  
66  
A
(1)  
Pulsed collector current  
ICM  
250  
250  
378  
Clamped inductive load current  
Maximum power dissipation  
ILM  
PD  
TC = 25 °C  
W
Revision: 07-Sep-11  
Document Number: 93410  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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