Datasheet > 70MT060WHTAPBF

70MT060WHTAPBF

更新时间： 2024-01-16 08:01:23

品牌	Logo	应用领域
威世 - VISHAY		双极性晶体管
页数	文件大小	规格书
9页	153K
描述
'Half Bridge' IGBT MTP (Warp 2 Speed IGBT), 70 A

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70MT060WHTAPBF 数据手册

70MT060WHTAPbF

Vishay Semiconductors

www.vishay.com

2000

1800

1600

1400

1200

1000

800

V_R= 200 V

I_F= 70 A, 125 °C

I_F= 70 A, 25 °C

600

400

200

100

1000

94469_13

dI_F/dt (A/μs)

Fig. 13 - Typical Stored Charge vs. dI_F/dt

0.1

D = 0.75

D = 0.50

D = 0.33

D = 0.25

D = 0.20

Single pulse

(thermal resistance)

0.01

0.001

0.00001

0.0001

0.001

0.01

0.1

1.0

t₁- Rectangular Pulse Duration (s)

94469_14

Fig. 14 - Maximum Thermal Impedance Z_thJCCharacteristics (IGBT)

1.0

0.1

D = 0.75

D = 0.50

D = 0.33

D = 0.25

D = 0.20

Single pulse

(thermal resistance)

0.01

0.001

0.00001

0.0001

0.001

0.01

0.1

1.0

94469_15

t₁- Rectangular Pulse Duration (s)

Fig. 15 - Maximum Thermal Impedance Z_thJCCharacteristics (Diode)

Revision: 05-Jul-11

Document Number: 94469

For technical questions, contact: indmodules@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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