生命周期: | Obsolete | 包装说明: | POST/STUD MOUNT, O-MUPM-D2 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.84 | 配置: | SINGLE |
最大直流栅极触发电流: | 100 mA | JEDEC-95代码: | TO-208AD |
JESD-30 代码: | O-MUPM-D2 | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 125 °C |
最低工作温度: | -65 °C | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | POST/STUD MOUNT |
最大均方根通态电流: | 110 A | 断态重复峰值电压: | 600 V |
重复峰值反向电压: | 600 V | 表面贴装: | NO |
端子形式: | SOLDER LUG | 端子位置: | UPPER |
触发设备类型: | SCR | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
70C60BFIL | MICROSEMI |
获取价格 |
Silicon Controlled Rectifier, 110A I(T)RMS, 600V V(RRM), 1 Element, TO-208AD, TO-83, 2 PIN | |
70C60BFILE3 | MICROSEMI |
获取价格 |
Silicon Controlled Rectifier, 110A I(T)RMS, 600V V(RRM), 1 Element, TO-208AD, TO-83, 2 PIN | |
70C60BIL | MICROSEMI |
获取价格 |
Silicon Controlled Rectifier, 110A I(T)RMS, 600V V(RRM), 1 Element, TO-209AC, TO-94, 3 PIN | |
70C80B | MICROSEMI |
获取价格 |
Silicon Controlled Rectifier | |
70C80BE3 | MICROSEMI |
获取价格 |
Silicon Controlled Rectifier, 110A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-209AC, | |
70C80BF | MICROSEMI |
获取价格 |
Silicon Controlled Rectifier | |
70C80BFE3 | MICROSEMI |
获取价格 |
Silicon Controlled Rectifier, 110A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-208AD, | |
70C80BFIL | MICROSEMI |
获取价格 |
Silicon Controlled Rectifier, 110A I(T)RMS, 800V V(RRM), 1 Element, TO-208AD, TO-83, 2 PIN | |
70C80BIL | MICROSEMI |
获取价格 |
Silicon Controlled Rectifier, 110A I(T)RMS, 800V V(RRM), 1 Element, TO-209AC, TO-94, 3 PIN | |
70C80BILE3 | MICROSEMI |
获取价格 |
Silicon Controlled Rectifier, 110A I(T)RMS, 800V V(RRM), 1 Element, TO-209AC, TO-94, 3 PIN |