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70CRY02

更新时间： 2024-10-29 19:44:47
品牌 Logo 应用领域
威世 - VISHAY 局域网高功率电源二极管
页数 文件大小 规格书
7页 115K
描述
Rectifier Diode, 1 Phase, 2 Element, 35A, Silicon, TO-218, TO-218, 3 PIN

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70CRY02 技术参数

生命周期：Active零件包装代码：TO-218
包装说明：R-PSFM-T3针数：3
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.75
其他特性：LOW LEAKAGE CURRENT, SNUBBER DIODE应用：HIGH POWER
外壳连接：CATHODE配置：COMMON CATHODE, 2 ELEMENTS
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
JEDEC-95代码：TO-218JESD-30 代码：R-PSFM-T3
最大非重复峰值正向电流：300 A元件数量：2
相数：1端子数量：3
最高工作温度：175 °C最低工作温度：-55 °C
最大输出电流：35 A封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
最大功率耗散：67 W认证状态：Not Qualified
最大反向恢复时间：0.028 µs表面贴装：NO
端子形式：THROUGH-HOLE端子位置：SINGLE
Base Number Matches：1

70CRY02 数据手册

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70CRU02PbF  
Vishay High Power Products  
Ultrafast Rectifier,  
2 x 35 A FRED PtTM  
FEATURES  
• Two common-cathode diodes  
• Ultrafast reverse recovery  
• Ultrafast reverse recovery current shape  
• Low forward voltage drop  
Base  
common  
cathode  
2
Available  
RoHS*  
COMPLIANT  
• Low leakage current  
• Optimized for power conversion: welding and industrial  
SMPS applications  
• Up to 175 °C operating junction temperature  
• Lead (Pb)-free (“PbF” suffix)  
1
3
Anode  
1
Anode  
2
2
Common  
cathode  
TO-218  
• Designed and qualified for industrial level  
DESCRIPTION  
The 70CRU02 integrates two state of the art Vishay HPP  
ultrafast recovery rectifiers in the common-cathode  
configuration. The planar structure of the diodes, and the  
platinum doping life-time control, provide a ultrasoft recovery  
current shape, together with the best overall performance,  
ruggedness and reliability characteristics. These devices are  
thus intended for high frequency applications in which the  
switching energy is designed not to be predominant portion  
of the total energy, such as in the output rectification stage  
of welding machines, SMPS, dc-to-dc converters. Their  
extremely optimized stored charge and low recovery current  
reduce both over-dissipation in the switching elements (and  
snubbers) and EMI/RFI.  
PRODUCT SUMMARY  
trr  
28 ns  
I
F(AV) at TC = 145 °C  
VR  
2 x 35 A  
200 V  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
IF(AV)  
VR  
TEST CONDITIONS  
TC = 145 °C  
MAX.  
35  
UNITS  
Continuous forward current per diode  
Cathode to anode voltage  
A
V
200  
Single pulse forward current per diode  
Maximum power dissipation per module  
Operating junction and storage temperatures  
IFSM  
TC = 25 °C  
300  
A
PD  
TC = 100 °C  
67  
W
°C  
TJ, TStg  
- 55 to 175  
ELECTRICAL SPECIFICATIONS PER DIODE (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX. UNITS  
Breakdown voltage,  
blocking voltage  
VBR  
VR  
,
IR = 60 µA  
200  
-
-
IF = 35 A  
-
-
-
-
-
-
0.95  
0.9  
0.85  
-
1.09  
V
Forward voltage  
VF  
IF = 35 A, TJ = 125 °C  
IF = 35 A, TJ = 175 °C  
VR = VR rated  
1.0  
0.9  
60  
2
µA  
mA  
pF  
Reverse leakage current  
IR  
TJ = 150 °C, VR = VR rated  
VR = 200 V  
-
Junction capacitance  
Series inductance  
CT  
LS  
50  
-
Measured from A-lead to K-lead 5 mm  
from package body  
-
10  
-
nH  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 94509  
Revision: 21-Jul-08  
For technical questions, contact: diodes-tech@vishay.com  
www.vishay.com  
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