Datasheet > 70CRU02PBF_11

70CRU02PBF_11

更新时间： 2024-10-29 08:00:51

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	137K
描述
Ultrafast Rectifier, 2 x 35 A FRED Pt

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70CRU02PBF_11 数据手册

VS-70CRU02PbF

Vishay Semiconductors

Ultrafast Rectifier, 2 x 35 A FRED Pt^®

FEATURES

• Ultrafast recovery time

Base

common

cathode

• Low forward voltage drop

• Up to 175 °C operating junction temperature

• Common-cathode diodes

• Low leakage current

• Optimized for power conversion: welding and industrial

SMPS applications

Anode

Common

cathode

TO-218

• Compliant to RoHS Directive 2002/95/EC

• Designed and qualified for industrial level

• Halogen-free according to IEC 61249-2-21 definition

DESCRIPTION

PRODUCT SUMMARY

The VS-70CRU02PbF integrates two state of the art Vishay

Semiconductors ultrafast recovery rectifiers in the

common-cathode configuration. The planar structure of the

diodes, and the platinum doping life-time control, provide a

ultrasoft recovery current shape, together with the best

Package

TO-218

2 x 35 A

200 V

I_F(AV)

V_R

overall

performance,

ruggedness

and

reliability

V_Fat I_F

1.09 V

characteristics. These devices are thus intended for high

frequency applications in which the switching energy is

designed not to be predominant portion of the total energy,

such as in the output rectification stage of welding

machines, SMPS, DC/DC converters. Their extremely

optimized stored charge and low recovery current reduce

both over-dissipation in the switching elements (and

snubbers) and EMI/RFI.

_rrtyp.

See Recovery table

175 °C

T_Jmax.

Diode variation

Common cathode

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

I_F(AV)

TEST CONDITIONS

T_C= 145 °C

MAX.

UNITS

Continuous forward current per diode

Cathode to anode voltage

V_R

200

Single pulse forward current per diode

Maximum power dissipation per module

Operating junction and storage temperatures

I_FSM

T_C= 25 °C

300

P_D

T_C= 100 °C

°C

T_J, T_Stg

- 55 to 175

ELECTRICAL SPECIFICATIONS PER DIODE (T_J= 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX. UNITS

Breakdown voltage, blocking voltage

_BR, V_R

I_R= 60 μA

200

I_F= 35 A

0.95

0.9

0.85

1.09

Forward voltage

V_F

I_F= 35 A, T_J= 125 °C

I_F= 35 A, T_J= 175 °C

V_R= V_Rrated

1.0

0.9

μA

Reverse leakage current

I_R

T_J= 150 °C, V_R= V_Rrated

V_R= 200 V

Junction capacitance

Series inductance

C_T

L_S

Measured from A-lead to K-lead 5 mm

from package body

Document Number: 94509

Revision: 09-Feb-11

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

12 3 4 5 6 7 8

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与70CRU02PBF_11相关器件

型号	品牌	获取价格	描述	数据表
70CRU04	INFINEON	获取价格	Ultrafast Rectifier
70CRU04	VISHAY	获取价格	Ultrafast Rectifier, 2 x 35 A FRED PtTM
70CRU04PBF	VISHAY	获取价格	Ultrafast Rectifier, 2 x 35 A FRED PtTM
70CRU04PBF_11	VISHAY	获取价格	Ultrafast Rectifier, 2 x 35 A FRED Pt
70CRY02	VISHAY	获取价格	Rectifier Diode, 1 Phase, 2 Element, 35A, Silicon, TO-218, TO-218, 3 PIN
70CRY02PBF	VISHAY	获取价格	Rectifier Diode, 1 Phase, 2 Element, 35A, Silicon, TO-218, ROHS COMPLIANT, 3 PIN
70D00000Z	LITTELFUSE	获取价格	Alarm Indicating Fuse
70D04	MOLEX	获取价格	Barrier Strip Terminal Block, 20A, 2 Row(s), 2 Deck(s)
70D04-45	MOLEX	获取价格	Barrier Strip Terminal Block
70D04-47	MOLEX	获取价格	Barrier Strip Terminal Block, 20A, 2 Row(s), 2 Deck(s)

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