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7026S35J8 PDF预览

7026S35J8

更新时间: 2024-09-20 06:08:23
品牌 Logo 应用领域
艾迪悌 - IDT 静态存储器内存集成电路
页数 文件大小 规格书
18页 154K
描述
PLCC-84, Reel

7026S35J8 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:PLCC
包装说明:QCCJ, LDCC84,1.2SQ针数:84
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8542.32.00.41风险等级:5.24
最长访问时间:35 ns其他特性:SEMAPHORE; AUTOMATIC POWER DOWN; LOW POWER STANDBY MODE
I/O 类型:COMMONJESD-30 代码:S-PQCC-J84
JESD-609代码:e0长度:29.3116 mm
内存密度:262144 bit内存集成电路类型:DUAL-PORT SRAM
内存宽度:16湿度敏感等级:1
功能数量:1端口数量:2
端子数量:84字数:16384 words
字数代码:16000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:16KX16输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:QCCJ
封装等效代码:LDCC84,1.2SQ封装形状:SQUARE
封装形式:CHIP CARRIER并行/串行:PARALLEL
峰值回流温度(摄氏度):225电源:5 V
认证状态:Not Qualified座面最大高度:4.57 mm
最大待机电流:0.015 A最小待机电流:4.5 V
子类别:SRAMs最大压摆率:0.295 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn85Pb15)端子形式:J BEND
端子节距:1.27 mm端子位置:QUAD
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:29.3116 mm
Base Number Matches:1

7026S35J8 数据手册

 浏览型号7026S35J8的Datasheet PDF文件第2页浏览型号7026S35J8的Datasheet PDF文件第3页浏览型号7026S35J8的Datasheet PDF文件第4页浏览型号7026S35J8的Datasheet PDF文件第5页浏览型号7026S35J8的Datasheet PDF文件第6页浏览型号7026S35J8的Datasheet PDF文件第7页 
HIGH-SPEED  
IDT7026S/L  
16K X 16 DUAL-PORT  
STATIC RAM  
Features  
True Dual-Ported memory cells which allow simultaneous  
access of the same memory location  
High-speed access  
IDT7026 easily expands data bus width to 32 bits or more  
using the Master/Slave select when cascading more than  
one device  
M/S = H for BUSY output flag on Master,  
M/S = L for BUSY input on Slave  
On-chip port arbitration logic  
Full on-chip hardware support of semaphore signaling  
between ports  
Fully asynchronous operation from either port  
TTL-compatible, single 5V (±10%) power supply  
Available in 84-pin PGA and 84-pin PLCC  
Industrial temperature range (-40°C to +85°C) is available  
for selected speeds  
– Commercial:15/20/25/35/55ns (max.)  
Industrial: 20/25/35/55ns (max.)  
Military: 20/25/35/55ns (max.)  
Low-power operation  
IDT7026S  
Active: 750mW (typ.)  
Standby: 5mW (typ.)  
IDT7026L  
Active: 750mW (typ.)  
Standby: 1mW (typ.)  
Separate upper-byte and lower-byte control for multi-  
plexed bus compatibility  
FunctionalBlockDiagram  
R/  
W
R
R
R/  
W
UBL  
L
UB  
LB  
CE  
OE  
L
LB  
CER  
OE  
R
L
L
R
I/O8L-I/O15L  
I/O0L-I/O7L  
I/O8R-I/O15R  
I/O  
Control  
I/O  
Control  
I/O0R-I/O7R  
(1,2)  
L
(1,2)  
R
BUSY  
BUSY  
A
13R  
A
13L  
Address  
Decoder  
MEMORY  
ARRAY  
Address  
Decoder  
A0R  
A
0L  
14  
14  
ARBITRATION  
SEMAPHORE  
LOGIC  
CE  
L
CE  
R
SEMR  
SEM  
L
M/S  
2939 drw 01  
NOTES:  
1. (MASTER): BUSY is output; (SLAVE): BUSY is input.  
2. BUSY outputs are non-tri-stated push-pull.  
JANUARY 2009  
1
DSC 2939/13  
©2009IntegratedDeviceTechnology,Inc.  

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