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5STP03X5800 PDF预览

5STP03X5800

更新时间: 2024-02-15 08:46:39
品牌 Logo 应用领域
ABB 栅极
页数 文件大小 规格书
6页 200K
描述
Phase Control Thyristor

5STP03X5800 技术参数

生命周期:Active包装说明:DISK BUTTON, O-CEDB-X4
Reach Compliance Code:compliantHTS代码:8541.30.00.80
风险等级:5.69Is Samacsys:N
配置:SINGLE最大直流栅极触发电流:400 mA
JESD-30 代码:O-CEDB-X4通态非重复峰值电流:4500 A
元件数量:1端子数量:4
最大通态电流:350000 A最高工作温度:125 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:DISK BUTTON认证状态:Not Qualified
最大均方根通态电流:550 A断态重复峰值电压:4900 V
重复峰值反向电压:4900 V子类别:Silicon Controlled Rectifiers
表面贴装:YES端子形式:UNSPECIFIED
端子位置:END触发设备类型:SCR
Base Number Matches:1

5STP03X5800 数据手册

 浏览型号5STP03X5800的Datasheet PDF文件第2页浏览型号5STP03X5800的Datasheet PDF文件第3页浏览型号5STP03X5800的Datasheet PDF文件第4页浏览型号5STP03X5800的Datasheet PDF文件第5页浏览型号5STP03X5800的Datasheet PDF文件第6页 
V
DRM
= 5600  
VDSM = 6500  
IT(AV)M = 350  
IT(RMS) = 550  
V
V
A
A
A
V
Phase Control Thyristor  
ITSM  
V(T0)  
rT  
= 4.5×103  
5STP 03X6500  
= 1.2  
= 2.3  
mW  
Doc. No. 5SYA1003-04 Oct. 04  
·
·
·
·
·
Patented free-floating silicon technology  
Low on-state and switching losses  
Designed for traction, energy and industrial applications  
Optimum power handling capability  
Interdigitated amplifying gate  
Blocking  
Maximum rated values 1)  
Symbol Conditions  
5STP 03X6500 5STP 03X6200 5STP 03X5800  
VDSM, VRSM f = 5 Hz, tp = 10 ms  
VDRM, VRRM f = 50 Hz, tp = 10 ms  
6500 V  
5600 V  
7000 V  
6200 V  
5300 V  
5800 V  
4900 V  
6300 V  
VRSM  
tp = 5 ms, single pulse  
6700 V  
dV/dtcrit  
Exp. to 3750 V, Tvj = 125°C  
1000 V/µs  
Characteristic values  
Parameter  
Symbol Conditions  
IDSM VDSM, Tvj = 125°C  
IRSM VRSM, Tvj = 125°C  
min  
typ  
max  
150  
150  
Unit  
Forward leakage current  
Reverse leakage current  
mA  
mA  
VDRM/ VRRM are equal to VDSM/ VRSM values up to Tvj = 110°C  
Mechanical data  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
min  
typ  
max  
Unit  
Mounting force  
Acceleration  
FM  
8
10  
12  
50  
kN  
a
a
Device unclamped  
Device clamped  
m/s2  
m/s2  
Acceleration  
100  
Characteristic values  
Parameter  
Symbol Conditions  
min  
34.8  
typ  
max  
Unit  
Weight  
m
0.4  
kg  
Housing thickness  
Surface creepage distance  
Air strike distance  
H
FM = 10 kN, Ta = 25 °C  
35.4  
mm  
mm  
mm  
DS  
Da  
38  
21  
1) Maximum rated values indicate limits beyond which damage to the device may occur  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  

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