Datasheet > 5STP04D3600

5STP04D3600

更新时间： 2024-01-21 17:47:15

品牌	Logo	应用领域
ABB		/
页数	文件大小	规格书
6页	420K
描述
Phase Control Thyristor

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数据手册

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5STP04D3600 数据手册

_DSM

I_TAVM

I_TRMS

I_TSM

_T0

4200 V

470 A

740 A

6400 A

1 V

Phase Control Thyristor

5STP 04D4200

1.5

mΩ

Doc. No. 5SYA1025-04 Jan. 02

• Patented free-floating silicon technology

• Low on-state and switching losses

• Designed for traction, energy and industrial applications

• Optimum power handling capability

• Interdigitated amplifying gate

Blocking

Maximum rated values ¹⁾

Symbol

Conditions

5STP 04D4200 5STP 04D4000 5STP 04D3600

V_DRM,V_RRMf = 50 Hz, t_p= 10ms

4200 V

4000 V

3600 V

V_RSM1

t_p= 5ms, single pulse

4600 V

4400 V

4000 V

dV/dt_crit

Exp. to 0.67 x V_DRM, T_j= 125°C

1000 V/µs

Characteristic values

Parameter

Forwarde leakage current

Reverse leakage current

Symbol Conditions

I_DRMV_DRM, Tj = 125°C

I_RRMV_RRM, Tj = 125°C

min

typ

max

100

Unit

Mechanical data

Maximum rated values ¹⁾

Parameter

Symbol Conditions

typ

max

Unit

Mounting force

Acceleration

Characteristic values

Parameter

F_M

100

Device unclamped

Device clamped

m/s²

Symbol Conditions

min

typ

max

Unit

Weight

0.3

Surface creepage distance

Air strike distance

D_S

D_a

¹⁾Maximum Ratings are those values beyond which damage to the device may occur

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

12 3 4 5 6

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