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5STP04D4600 PDF预览

5STP04D4600

更新时间: 2024-09-25 03:04:35
品牌 Logo 应用领域
ABB 栅极
页数 文件大小 规格书
6页 268K
描述
Phase Control Thyristor

5STP04D4600 技术参数

生命周期:Active包装说明:DISK BUTTON, O-CEDB-X4
Reach Compliance Code:compliantHTS代码:8541.30.00.80
风险等级:5.68Is Samacsys:N
标称电路换相断开时间:700 µs配置:SINGLE
关态电压最小值的临界上升速率:1000 V/us最大直流栅极触发电流:400 mA
最大直流栅极触发电压:2.6 V最大维持电流:80 mA
JESD-30 代码:O-CEDB-X4通态非重复峰值电流:5000 A
元件数量:1端子数量:4
最大通态电流:440000 A最高工作温度:125 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:DISK BUTTON认证状态:Not Qualified
最大均方根通态电流:690 A断态重复峰值电压:4000 V
重复峰值反向电压:4000 V子类别:Silicon Controlled Rectifiers
表面贴装:YES端子形式:UNSPECIFIED
端子位置:END触发设备类型:SCR
Base Number Matches:1

5STP04D4600 数据手册

 浏览型号5STP04D4600的Datasheet PDF文件第2页浏览型号5STP04D4600的Datasheet PDF文件第3页浏览型号5STP04D4600的Datasheet PDF文件第4页浏览型号5STP04D4600的Datasheet PDF文件第5页浏览型号5STP04D4600的Datasheet PDF文件第6页 
V
DSM  
ITAVM  
ITRMS  
ITSM  
V
T0  
=
=
=
=
=
=
5200 V  
440 A  
690 A  
5000 A  
1.2 V  
Phase Control Thyristor  
5STP 04D5200  
r
T  
1.6  
mΩ  
Doc. No. 5SYA1026-04 Jan. 02  
Patented free-floating silicon technology  
Low on-state and switching losses  
Designed for traction, energy and industrial applications  
Optimum power handling capability  
Interdigitated amplifying gate  
Blocking  
Maximum rated values 1)  
Symbol  
Conditions  
5STP 04D5200 5STP 04D5000 5STP 04D4600  
VDSM, VRSM f = 5 Hz, tp = 10ms, Tj = 125°C  
VDRM, VRRM f = 50 Hz, tp = 10ms, Tj = 125°C  
5200 V  
4400 V  
5700 V  
5000 V  
4200 V  
5500 V  
1000 V/µs  
4600 V  
4000 V  
5100 V  
VRSM1  
dV/dtcrit  
tp = 5ms, single pulse, Tj = 125°C  
Exp. to 0.67 x VDRM, Tj = 125°C  
Characteristic values  
Parameter  
Symbol Conditions  
IDSM VDSM, Tj = 125°C  
IRSM VRSM, Tj = 125°C  
min  
min  
typ  
max  
100  
100  
Unit  
mA  
mA  
Forwarde leakage current  
Reverse leakage current  
VDRM/ VRRM are equal to VDSM/ VRSM values up to Tj = 110°C  
Mechanical data  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
typ  
max  
Unit  
Mounting force  
Acceleration  
Acceleration  
Characteristic values  
Parameter  
FM  
a
a
8
10  
12  
50  
100  
kN  
Device unclamped  
Device clamped  
m/s2  
m/s2  
Symbol Conditions  
min  
typ  
max  
Unit  
Weight  
m
0.3  
kg  
Surface creepage distance  
Air strike distance  
DS  
Da  
25  
14  
mm  
mm  
1) Maximum Ratings are those values beyond which damage to the device may occur  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  

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