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5STP03X6500 PDF预览

5STP03X6500

更新时间: 2024-02-07 13:49:09
品牌 Logo 应用领域
ABB /
页数 文件大小 规格书
6页 200K
描述
Phase Control Thyristor

5STP03X6500 技术参数

生命周期:Active包装说明:DISK BUTTON, O-XXDB-X3
Reach Compliance Code:compliantHTS代码:8541.30.00.80
风险等级:5.75配置:SINGLE
最大直流栅极触发电流:400 mAJESD-30 代码:O-XXDB-X3
通态非重复峰值电流:4500 A元件数量:1
端子数量:3最大通态电流:350000 A
最高工作温度:125 °C封装主体材料:UNSPECIFIED
封装形状:ROUND封装形式:DISK BUTTON
认证状态:Not Qualified最大均方根通态电流:550 A
断态重复峰值电压:6500 V重复峰值反向电压:6500 V
子类别:Silicon Controlled Rectifiers表面贴装:YES
端子形式:UNSPECIFIED端子位置:UNSPECIFIED
触发设备类型:SCRBase Number Matches:1

5STP03X6500 数据手册

 浏览型号5STP03X6500的Datasheet PDF文件第2页浏览型号5STP03X6500的Datasheet PDF文件第3页浏览型号5STP03X6500的Datasheet PDF文件第4页浏览型号5STP03X6500的Datasheet PDF文件第5页浏览型号5STP03X6500的Datasheet PDF文件第6页 
V
DRM
= 5600  
VDSM = 6500  
IT(AV)M = 350  
IT(RMS) = 550  
V
V
A
A
A
V
Phase Control Thyristor  
ITSM  
V(T0)  
rT  
= 4.5×103  
5STP 03X6500  
= 1.2  
= 2.3  
mW  
Doc. No. 5SYA1003-04 Oct. 04  
·
·
·
·
·
Patented free-floating silicon technology  
Low on-state and switching losses  
Designed for traction, energy and industrial applications  
Optimum power handling capability  
Interdigitated amplifying gate  
Blocking  
Maximum rated values 1)  
Symbol Conditions  
5STP 03X6500 5STP 03X6200 5STP 03X5800  
VDSM, VRSM f = 5 Hz, tp = 10 ms  
VDRM, VRRM f = 50 Hz, tp = 10 ms  
6500 V  
5600 V  
7000 V  
6200 V  
5300 V  
5800 V  
4900 V  
6300 V  
VRSM  
tp = 5 ms, single pulse  
6700 V  
dV/dtcrit  
Exp. to 3750 V, Tvj = 125°C  
1000 V/µs  
Characteristic values  
Parameter  
Symbol Conditions  
IDSM VDSM, Tvj = 125°C  
IRSM VRSM, Tvj = 125°C  
min  
typ  
max  
150  
150  
Unit  
Forward leakage current  
Reverse leakage current  
mA  
mA  
VDRM/ VRRM are equal to VDSM/ VRSM values up to Tvj = 110°C  
Mechanical data  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
min  
typ  
max  
Unit  
Mounting force  
Acceleration  
FM  
8
10  
12  
50  
kN  
a
a
Device unclamped  
Device clamped  
m/s2  
m/s2  
Acceleration  
100  
Characteristic values  
Parameter  
Symbol Conditions  
min  
34.8  
typ  
max  
Unit  
Weight  
m
0.4  
kg  
Housing thickness  
Surface creepage distance  
Air strike distance  
H
FM = 10 kN, Ta = 25 °C  
35.4  
mm  
mm  
mm  
DS  
Da  
38  
21  
1) Maximum rated values indicate limits beyond which damage to the device may occur  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  

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