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5SNA0800N3301 PDF预览

5SNA0800N3301

更新时间: 2022-04-23 23:00:11
品牌 Logo 应用领域
ABB 双极性晶体管
页数 文件大小 规格书
9页 320K
描述
IGBT Module

5SNA0800N3301 数据手册

 浏览型号5SNA0800N3301的Datasheet PDF文件第1页浏览型号5SNA0800N3301的Datasheet PDF文件第3页浏览型号5SNA0800N3301的Datasheet PDF文件第4页浏览型号5SNA0800N3301的Datasheet PDF文件第5页浏览型号5SNA0800N3301的Datasheet PDF文件第6页浏览型号5SNA0800N3301的Datasheet PDF文件第7页 
5SNA 0800N330100  
3)  
IGBT characteristic values  
Parameter  
Symbol Conditions  
min typ max Unit  
Collector (-emitter)  
breakdown voltage  
V(BR)CES VGE = 0 V, IC = 10 mA, Tvj = 25 °C  
3300  
V
4)  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
Tvj = 125 °C  
2.7  
3.5  
3.1  
3.8  
3.4  
4.3  
8
V
V
Collector-emitter  
saturation voltage  
VCE sat  
IC = 800 A, VGE = 15 V  
VCE = 3300 V, VGE = 0 V  
mA  
mA  
nA  
V
Collector cut-off current  
ICES  
80  
Gate leakage current  
IGES  
-500  
5.5  
500  
7.5  
VCE = 0 V, VGE = ±20 V, Tvj = 125 °C  
Gate-emitter threshold voltage  
VGE(TO)  
IC = 160 mA, VCE = VGE, Tvj = 25 °C  
IC = 800 A, VCE = 1800 V,  
VGE = -15 V .. 15 V  
Gate charge  
Qge  
8.07  
µC  
Input capacitance  
Cies  
Coes  
Cres  
125  
7.71  
1.48  
525  
VCE = 25 V, VGE = 0 V, f = 1 MHz,  
Tvj = 25 °C  
nF  
Output capacitance  
Reverse transfer capacitance  
VCC = 1800 V,  
IC = 800 A,  
RG = 2.2 W,  
VGE = ±15 V,  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
Turn-on delay time  
Rise time  
td(on)  
ns  
ns  
ns  
ns  
525  
190  
tr  
Ls = 100 nH, inductive load Tvj = 125 °C  
200  
VCC = 1800 V,  
IC = 800 A,  
RG = 2.2 W,  
VGE = ±15 V,  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
1060  
1210  
340  
Turn-off delay time  
Fall time  
td(off)  
tf  
Ls = 100 nH, inductive load Tvj = 125 °C  
460  
VCC = 1800 V, IC = 800 A,  
VGE = ±15 V, RG = 2.2 W,  
Ls = 100 nH, inductive load  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
Tvj = 125 °C  
1000  
1380  
880  
Turn-on switching energy  
Turn-off switching energy  
Eon  
Eoff  
mJ  
mJ  
VCC = 1800 V, IC = 800 A,  
VGE = ±15 V, RG = 2.2 W,  
Ls = 100 nH, inductive load  
1250  
t
psc 10 μs, VGE = 15 V, Tvj = 125 °C,  
Short circuit current  
ISC  
3300  
A
VCC = 2500 V, VCEM CHIP 3300 V  
Module stray inductance  
Ls CE  
15  
nH  
TC = 25 °C  
TC = 125 °C  
0.09  
0.13  
Resistance, terminal-chip  
RCC’+EE’  
mΩ  
3)  
Characteristic values according to IEC 60747 – 9  
Collector-emitter saturation voltage is given at chip level  
4)  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA 1591-00 Jan 07  
page 2 of 9  

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