5KP12CT

更新时间： 2024-09-16 12:58:51

品牌	Logo	应用领域
力特 - LITTELFUSE		瞬态抑制器二极管
页数	文件大小	规格书
5页	139K
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中文翻译

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5KP12CT 数据手册

TransientVoltage Suppression Diodes

Axial Leaded – 5000W > 5KP series

RoHS

5KP Series

Description

The 5KP Series is designed speciﬁcally to protect sensitive

electronic equipment from voltage transients induced by

lightning and other transient voltage events.

Features

tꢀ)BMPHFOꢁ'SFF

tꢀ -PXꢀJODSFNFOUBMꢀTVSHFꢀ

resistance

tꢀ 3P)4ꢀDPNQMJBOU

tꢀ 5ZQJDBMꢀ*_Rless than 2μA

above 12V

tꢀ 5ZQJDBMꢀNBYJNVNꢀ

temperature coefﬁcient

ΔV_BR= 0.1% x V_BR@25°C x ΔT tꢀ )JHIꢀUFNQFSBUVSFꢀ

soldering guaranteed:

Agency Approvals

tꢀ (MBTTꢀQBTTJWBUFEꢀDIJQꢀ

260°C/40 seconds / 0.375”,

(9.5mm) lead length, 5

lbs., (2.3kg) tension

tꢀ 1MBTUJDꢀQBDLBHFꢀIBTꢀ

Underwriters Laboratory

Flammability classiﬁcation

94V-O

junction in P600 package

AGENCY

AGENCY FILE NUMBER

E128662/E230531

tꢀ ꢂꢃꢃꢃ8ꢀQFBLꢀQVMTFꢀ

capability at 10×1000μs

waveform, repetition rate

(duty cycles):0.01%

tꢀ 'BTUꢀSFTQPOTFꢀUJNFꢄꢀ

typically less than 1.0ps

from 0 Volts to BV min

Maximum Ratings andThermal Characteristics

(T_A=25^OC unless otherwise noted)

tꢀ .BUUFꢀ5JOꢀ-FBEoGSFFꢀQMBUFE

tꢀ &YDFMMFOUꢀDMBNQJOHꢀ

capability

Parameter

Symbol

P_PPM

Value

5000

Unit

Peak Pulse Power Dissipation by

10x1000μs test waveform (Fig.1)

(Note 1)

Applications

Steady State Power Dissipation on

iniﬁnite heat sink atT_L=75ºC (Fig. 5)

P_D

8.0

TVS devices are ideal for the protection of I/O interfaces,

_CCbus and other vulnerable circuits used in telecom,

Peak Forward Surge Current, 8.3ms

Single Half Sine Wave Unidirectional

only (Note 2)

I_FSM

400

computer, industrial and consumer electronic applications.

Maximum Instantaneous Forward

Voltage at 100A for Unidirectional

only (Note 3)

V_F

3.5/5.0

Operating Junction and Storage

Temperature Range

T , T_STG-55 to 175

°C

TypicalThermal Resistance Junction

to Lead

R_uJL

R_uJA

8.0

°C/W

TypicalThermal Resistance Junction

to Ambient

Notes:

1. Non-repetitive current pulse , per Fig. 3 and derated aboveT_A= 25^OC per Fig. 2.

2. Measured on 8.3ms single half sine wave or equivalent square wave, duty cycle=4 per

minute maximum.

3. V_F<3.5V for devices of V_BR<_ 200V and V_F<5.0V for devices of V_BR>_ 201V.

105

Revision: January 09, 2009

5KP Series

Speciﬁcations are subject to change without notice.

Please refer to http://www.Littelfuse.com/series/5KP.html for current information.

12 3 4 5

中文翻译

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与5KP12CT相关器件

型号	品牌	获取价格	描述	数据表
5KP12C-T	RECTRON	获取价格	Trans Voltage Suppressor Diode, 5000W, Bidirectional, 1 Element, Silicon, PLASTIC, R-6, 2
5KP12C-T	DIODES	获取价格	Trans Voltage Suppressor Diode, 5000W, 12V V(RWM), Bidirectional, 1 Element, Silicon
5KP12CT-2	CRYDOM	获取价格	Trans Voltage Suppressor Diode, 5000W, 12V V(RWM), Bidirectional, 1 Element, Silicon
5KP12C-T3	SENSITRON	获取价格	Trans Voltage Suppressor Diode, 5000W, 12V V(RWM), Bidirectional, 1 Element, Silicon, PLAS
5KP12C-T3-LF	WTE	获取价格	Trans Voltage Suppressor Diode, 5000W, 12V V(RWM), Bidirectional, 1 Element, Silicon, ROHS
5KP12C-TP	MCC	获取价格	Trans Voltage Suppressor Diode, 5000W, 12V V(RWM), Bidirectional, 1 Element, Silicon, ROHS
5KP12CTR	MICROSEMI	获取价格	暂无描述
5KP12CV	RECTRON	获取价格	Package / Case : R-6;Mounting Style : Through Hole;Power Rating : 5000 W;Polarity : Bidire
5KP12E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode
5KP12-E3/4G	VISHAY	获取价格	Trans Voltage Suppressor Diode, 5000W, 12V V(RWM), Unidirectional, 1 Element, Silicon, PLA

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