Ordering number : ENN6639
5HN01SP
N-Channel Silicon MOSFET
5HN01SP
Ultrahigh-Speed Switching Applications
Features
Package Dimensions
unit : mm
•
Low ON-resistance.
• Ultrahigh-speed switching.
• 4V drive.
2180
[5HN01SP]
2.2
4.0
0.4
0.5
0.4
0.4
1
2
3
1.3
1.3
1 : Source
2 : Drain
3 : Gate
Specifications
3.0
3.8nom
Absolute Maximum Ratings at Ta=25°C
SANYO : SPA
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
Unit
V
V
50
±20
DSS
GSS
V
V
I
0.1
A
D
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
I
PW≤10µs, duty cycle≤1%
0.4
A
DP
P
0.25
W
°C
°C
D
Tch
150
Tstg
--55 to +150
Electrical Characteristics at Ta=25°C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
50
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Sourse Leakage Current
Cutoff Voltage
V
I
=1mA, V =0
V
µA
µA
V
(BR)DSS
D GS
I
V
V
V
=50V, V =0
GS
10
±10
2.4
DSS
GSS
DS
GS
DS
I
=±16V, V =0
DS
V (off)
GS
=10V, I =100µA
1
D
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Sem iconductor Com pany
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82200 TS IM TA-2034 No.6639-1/4