Datasheet > 5HN02C

5HN02C

更新时间： 2024-11-10 21:54:23

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描述
Ultrahigh-Speed Switching Applications

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5HN02C 数据手册

Ordering number:ENN6363

N-Channel Silicon MOSFET

5HN02C

Ultrahigh-Speed Switching Applications

Features

Package Dimensions

unit:mm

· Low ON resistance.

· Ultrahigh-speed switching.

· 4V drive.

2091A

[5HN02C]

0.4

0.16

0 to 0.1

0.95

1.9

2.9

1 : Gate

2 : Source

3 : Drain

SANYO : CP

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Parameter

Drain-to-Source Voltage

Symbol

Conditions

Ratings

Unit

±20

DSS

Gate-to-Source Voltage

Drain Current (DC)

GSS

0.2

Drain Current (pulse)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

PW≤10µs, duty cycle≤1%

0.8

Tch

0.25

˚C

150

Tstg

–55 to +150

Electrical Characteristics at Ta = 25˚C

Ratings

typ

Parameter

Symbol

Conditions

Unit

min

max

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

=1mA, V =0

D GS

µA

(BR)DSS

=50V, V =0

DSS

=±16V, V =0

±10

2.4

GSS

(off)

=10V, I =100µA

=10V, I =100mA

| yfs |

Forward Transfer Admittance

0.22

0.31

(on)1

=100mA, V =10V

1.8

2.3

3.2

Ω

Static Drain-to-Source On-State Resistance

(on)2

=50mA, V =4V

Ω

Marking : YF

Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

60100TS (KOTO) TA-2701 No.6363-1/4

12 3 4

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