5秒后页面跳转
5962-9679502MYA PDF预览

5962-9679502MYA

更新时间: 2024-01-23 06:15:31
品牌 Logo 应用领域
WEDC 静态存储器内存集成电路
页数 文件大小 规格书
25页 172K
描述
Standard SRAM, 256KX16, 25ns, CMOS, CDSO44, CERAMIC, SOJ-44

5962-9679502MYA 技术参数

生命周期:Obsolete包装说明:CERAMIC, SOJ-44
Reach Compliance Code:unknown风险等级:5.84
Is Samacsys:N最长访问时间:25 ns
JESD-30 代码:R-CDSO-J44JESD-609代码:e0
长度:28.575 mm内存密度:4194304 bit
内存集成电路类型:STANDARD SRAM内存宽度:16
功能数量:1端子数量:44
字数:262144 words字数代码:256000
工作模式:ASYNCHRONOUS最高工作温度:125 °C
最低工作温度:-55 °C组织:256KX16
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装代码:SOJ
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:PARALLEL认证状态:Not Qualified
座面最大高度:4.44 mm最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:MILITARY端子面层:TIN LEAD
端子形式:J BEND端子节距:1.27 mm
端子位置:DUALBase Number Matches:1

5962-9679502MYA 数据手册

 浏览型号5962-9679502MYA的Datasheet PDF文件第3页浏览型号5962-9679502MYA的Datasheet PDF文件第4页浏览型号5962-9679502MYA的Datasheet PDF文件第5页浏览型号5962-9679502MYA的Datasheet PDF文件第7页浏览型号5962-9679502MYA的Datasheet PDF文件第8页浏览型号5962-9679502MYA的Datasheet PDF文件第9页 
TABLE I. Electrical performance characteristics.  
Test  
Symbol  
Conditions  
Group A  
Subgroups  
Device  
type  
Limits  
Units  
-55C TC +125C  
4.5 V VCC 5.5 V  
unless otherwise specified  
Min  
Max  
300  
95  
Operating supply  
current 1/  
ICC1  
1, 2, 3  
1, 2, 3  
01-06  
07  
mA  
mA  
all I/O's = 0 mA, WE , CE = VIL  
VCC standby  
current (TTL)  
ICC2  
01-06  
07  
60  
25  
CE = VIH, VIN < VIL  
VIN > VIH  
VCC standby  
current (CMOS)  
ICC3  
1, 2, 3  
1, 2, 3  
01-03  
25  
mA  
CE > VCC-0.2 V  
IN > VCC-0.2 V or VIN < 0.2 V  
V
04-06  
07  
10  
15  
Data retention  
voltage  
VDR  
2.0  
V
CE > VCC-0.2 V,  
VIN > VCC-0.2 V or VIN < 0.2 V  
04-07  
04 - 06  
07  
Data retention  
current  
ICCDR  
VCC = 2.0 V  
2.0  
12  
mA  
Input leakage  
current (low)  
IILK  
VIN = 0.0 V to VCC  
VI/O = 0.0 V to VCC  
IOH = -4.0 mA  
1, 2, 3  
1, 2, 3  
1, 2, 3  
1, 2, 3  
All  
-10  
-10  
+10  
+10  
μA  
μA  
V
Output leakage  
current (high)  
IOLK  
VOH  
VOL  
All  
All  
High level output  
voltage  
2.4  
Low level output  
voltage  
IOL = 6.0 mA  
01-06  
07  
V
0.4  
0.4  
I
OL = 8.0 mA  
Input capacitance  
CIN  
4
All  
12  
14  
pF  
pF  
V
IN = 0 V, TA = 25C,  
f = 1.0 MHz, see 4.4.1e  
Input/output  
capacitance  
CI/O  
4
All  
All  
V
OUT = 0 V, TA = 25C,  
f = 1.0 MHz, see 4.4.1e  
Functional tests  
See 4.4.1c  
7, 8A, 8B  
See footnotes at end of table.  
SIZE  
STANDARD  
5962-96795  
A
MICROCIRCUIT DRAWING  
DEFENSE SUPPLY CENTER COLUMBUS  
COLUMBUS, OHIO 43218-3990  
REVISION LEVEL  
D
SHEET  
6
DSCC FORM 2234  
APR 97  

与5962-9679502MYA相关器件

型号 品牌 获取价格 描述 数据表
5962-9679502MYX WEDC

获取价格

Standard SRAM, 256KX16, 25ns, CMOS, CDSO44, CERAMIC, SOJ-44
5962-9679503MXA WEDC

获取价格

Standard SRAM, 256KX16, 20ns, CMOS, FP-44
5962-9679503MXX WEDC

获取价格

IC 256K X 16 STANDARD SRAM, 20 ns, DFP44, FP-44, Static RAM
5962-9679503MYA WEDC

获取价格

Standard SRAM, 256KX16, 20ns, CMOS, CDSO44, CERAMIC, SOJ-44
5962-9679504MXA WEDC

获取价格

Standard SRAM, 256KX16, 35ns, CMOS, FP-44
5962-9679504MXX WEDC

获取价格

Standard SRAM, 256KX16, 35ns, CMOS, FP-44
5962-9679504MYA WEDC

获取价格

Standard SRAM, 256KX16, 35ns, CMOS, CDSO44, CERAMIC, SOJ-44
5962-9679505MXA WEDC

获取价格

Standard SRAM, 256KX16, 25ns, CMOS, FP-44
5962-9679505MYA WEDC

获取价格

Standard SRAM, 256KX16, 25ns, CMOS, CDSO44, CERAMIC, SOJ-44
5962-9679506MXA WEDC

获取价格

Standard SRAM, 256KX16, 20ns, CMOS, FP-44