Datasheet > 5962-9679501MYX

5962-9679501MYX

更新时间： 2023-02-15 00:00:00

品牌	Logo	应用领域
WEDC		静态存储器
页数	文件大小	规格书
24页	209K
描述
Standard SRAM, 256KX16, 35ns, CMOS, CDSO44, CERAMIC, SOJ-44

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5962-9679501MYX 数据手册

TABLE I. Electrical performance characteristics.

Test

Symbol

Conditions

Group A

Subgroups

Device

type

Limits

Units

-55°C ≤ T_C≤ +125°C

4.5 V ≤ V_CC≤ 5.5 V

unless otherwise specified

Min

Max

300

Operating supply

current 1/

I_CC1

1, 2, 3

All

all I/O's = 0 mA, WE , CE = V_IL

V_CCstandby

current (TTL)

I_CC2

CE = V_IH, V_IN< V_IL

V_IN> V_IH

V_CCstandby

current (CMOS)

I_CC3

1, 2, 3

01-03

04-06

CE > V_CC-0.2 V

V_IN> V_CC-0.2 V or V_IN< 0.2 V

Data retention

voltage

V_DR

-2.0

CE > V_CC-0.2 V,

V_IN> V_CC-0.2 V or V_IN< 0.2 V

04-06

Data retention

current

I_CCDR

V_CC= 2.0 V

V_IN= 0.0 V to V_CC

V_I/O= 0.0 V to V_CC

I_OH= -4.0 mA

2.0

µA

Input leakage

current (low)

I_ILK

1, 2, 3

All

-10

+10

Output leakage

current (high)

I_OLK

V_OH

V_OL

C_IN

High level output

voltage

2.4

Low level output

voltage

I_OL= 6.0 mA

0.4

Input capacitance

V_IN= 0 V, T_A= 25°C,

f = 1.0 MHz, see 4.4.1e

Input/output

capacitance

C_I/O

V_OUT= 0 V, T_A= 25°C,

f = 1.0 MHz, see 4.4.1e

Functional tests

Read cycle time

See 4.4.1c

7, 8A, 8B

All

t_AVAV

See figures 4 and 5 as applicable 9, 10, 11

2/ 3/

01,04

02,05

03,06

See footnotes at end of table.

SIZE

STANDARD

MICROCIRCUIT DRAWING

5962-96795

DEFENSE SUPPLY CENTER COLUMBUS

COLUMBUS, OHIO 43218-3990

REVISION LEVEL

SHEET

DSCC FORM 2234

APR 97

1...3 4 567 8 9...24

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