Datasheet > 43CTQ100G-1PBF

43CTQ100G-1PBF

更新时间： 2024-11-04 19:49:27

品牌	Logo	应用领域
英飞凌 - INFINEON		二极管
页数	文件大小	规格书
7页	698K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 100V V(RRM), Silicon, TO-262AA, PLASTIC, TO-262, 3 PIN

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43CTQ100G-1PBF 数据手册

Preliminary Data Sheet PD-20834 09/04

43CTQ...GS

43CTQ...G-1

SCHOTTKY RECTIFIER

40 Amp

I_F(AV)= 40 Amp

V_R= 80 - 100V

Description/ Features

Major Ratings and Characteristics

ThiscentertapSchottkyrectifierserieshasbeenoptimizedfor

low reverse leakage at high temperature. The proprietary

barrier technology allows for reliable operation up to 175°C

junction temperature. Typical applications are in switching

power supplies, converters, free-wheeling diodes, and re-

verse battery protection.

Characteristics

Values

Units

Rectangular

waveform

F(AV)

80-100

850

175° C T operation

RRM

Center tap configuration

Low forward voltage drop

@ tp=5µssine

FSM

High purity, high temperature epoxy encapsulation for

@20Apk,T =125°C

(per leg)

0.67

enhanced mechanical strength and moisture resistance

High frequency operation

Guard ring for enhanced ruggedness and long term

range

-55to175

°C

reliability

Case Styles

43CTQ...G-1

43CTQ...GS

Base

Common

Cathode

Base

Common

Cathode

Common

Cathode

Anode

Common

Cathode

Anode

D²PAK

TO-262

12 3 4 5 6 7

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