43CTQ100G-1TRL

更新时间： 2024-11-04 13:04:39

品牌	Logo	应用领域
威世 - VISHAY		二极管
页数	文件大小	规格书
6页	132K
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43CTQ100G-1TRL 数据手册

43CTQ...GS/43CTQ...G-1

Vishay High Power Products

Schottky Rectifier, 2 x 20 A

FEATURES

43CTQ...G-1

43CTQ...GS

• 175 °C T_Joperation

• Center tap configuration

• Low forward voltage drop

• High purity, high temperature epoxy encapsulation for

enhanced mechanical strength and moisture resistance

Base

common

cathode

Common

cathode

• High frequency operation

• Guard ring for enhanced ruggedness and long term

reliability

• Designed and qualified for industrial level

Common

DESCRIPTION

cathode

Anode

cathode

This center tap Schottky rectifier series has been optimized

for very low reverse leakage at high temperature. The

proprietary barrier technology allows for reliable operation up

to 175 °C junction temperature. Typical applications are in

switching power supplies, converters, freewheeling diodes,

and reverse battery protection.

D²PAK

TO-262

PRODUCT SUMMARY

I_F(AV)

2 x 20 A

80/100 V

V_R

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

I_F(AV)

V_RRM

I_FSM

CHARACTERISTICS

VALUES

UNITS

Rectangular waveform

80/100

850

t_p= 5 µs sine

V_F

20 Apk, T_J= 125 °C (per leg)

Range

0.67

T_J

- 55 to 175

°C

VOLTAGE RATINGS

PARAMETER

43CTQ080GS

43CTQ080G-1

43CTQ100GS

43CTQ100G-1

SYMBOL

UNITS

Maximum DC reverse voltage

V_R

100

Maximum working peak reverse voltage

V_RWM

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum average

forward current

See fig. 5

per leg

I_F(AV)

50 % duty cycle at T_C= 135 °C, rectangular waveform

per device

Maximum peak one cycle non-repetitive

surge current per leg

See fig. 7

Following any rated load

condition and with rated

V_RRMapplied

5 µs sine or 3 µs rect. pulse

10 ms sine or 6 ms rect. pulse

850

I_FSM

275

7.5

Non-repetitive avalanche energy per leg

Repetitive avalanche current per leg

E_AS

I_AR

T_J= 25 °C, I_AS= 0.5 A, L = 60 mH

Current decaying linearly to zero in 1 µs

Frequency limited by T_Jmaximum V_A= 1.5 x V_Rtypical

0.5

Document Number: 93348

Revision: 21-Aug-08

For technical questions, contact: diodes-tech@vishay.com

www.vishay.com

12 3 4 5 6

中文翻译

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与43CTQ100G-1TRL相关器件

型号	品牌	获取价格	描述	数据表
43CTQ100G-1TRLP	VISHAY	获取价格	Schottky Rectifier, 2 x 20 A
43CTQ100G-1TRLPBF	VISHAY	获取价格	Schottky Rectifier, 2 x 20 A
43CTQ100G-1TRLPBF	INFINEON	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 100V V(RRM), Silicon, TO-262AA, PLASTI
43CTQ100G-1TRR	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 100V V(RRM), Silicon, TO-262AA, PLASTI
43CTQ100G-1TRR	INFINEON	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 100V V(RRM), Silicon, TO-262AA, PLASTI
43CTQ100G-1TRRP	VISHAY	获取价格	Schottky Rectifier, 2 x 20 A
43CTQ100G-1TRRPBF	VISHAY	获取价格	Schottky Rectifier, 2 x 20 A
43CTQ100G-1TRRPBF	INFINEON	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 100V V(RRM), Silicon, TO-262AA, PLASTI
43CTQ100GP	VISHAY	获取价格	Schottky Rectifier, 2 x 20 A
43CTQ100GPBF	VISHAY	获取价格	Schottky Rectifier, 2 x 20 A

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