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43CTQ100S PDF预览

43CTQ100S

更新时间: 2024-10-03 06:27:27
品牌 Logo 应用领域
威世 - VISHAY 整流二极管
页数 文件大小 规格书
6页 130K
描述
Schottky Rectifier, 2 x 20 A

43CTQ100S 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-263包装说明:R-PSSO-G2
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.14Is Samacsys:N
其他特性:FREE WHEELING DIODE, HIGH RELIABILITY应用:GENERAL PURPOSE
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.98 VJESD-30 代码:R-PSSO-G2
JESD-609代码:e0最大非重复峰值正向电流:850 A
元件数量:2相数:1
端子数量:2最高工作温度:175 °C
最大输出电流:20 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:100 V子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子面层:TIN LEAD端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

43CTQ100S 数据手册

 浏览型号43CTQ100S的Datasheet PDF文件第2页浏览型号43CTQ100S的Datasheet PDF文件第3页浏览型号43CTQ100S的Datasheet PDF文件第4页浏览型号43CTQ100S的Datasheet PDF文件第5页浏览型号43CTQ100S的Datasheet PDF文件第6页 
43CTQ...S/43CTQ...-1  
Vishay High Power Products  
Schottky Rectifier, 2 x 20 A  
43CTQ...-1  
FEATURES  
43CTQ...S  
• 175 °C TJ operation  
• Center tap configuration  
• Low forward voltage drop  
• High purity, high temperature epoxy encapsulation for  
enhanced mechanical strength and moisture resistance  
Base  
common  
cathode  
Base  
common  
cathode  
• High frequency operation  
2
2
• Guard ring for enhanced ruggedness and long term  
reliability  
• Designed and qualified for Q101 level  
2
2
1
1
3
3
Common  
Common  
DESCRIPTION  
cathode  
Anode  
Anode  
Anode  
Anode  
cathode  
This center tap Schottky rectifier series has been optimized  
for low reverse leakage at high temperature. The proprietary  
barrier technology allows for reliable operation up to 175 °C  
junction temperature. Typical applications are in switching  
power supplies, freewheeling diodes, and reverse battery  
protection.  
D2PAK  
TO-262  
PRODUCT SUMMARY  
IF(AV)  
2 x 20 A  
80/100 V  
VR  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
40  
UNITS  
Rectangular waveform  
A
V
80/100  
850  
tp = 5 µs sine  
A
VF  
20 Apk, TJ = 125 °C (per leg)  
Range  
0.67  
V
TJ  
- 55 to 175  
°C  
VOLTAGE RATINGS  
PARAMETER  
43CTQ080S  
43CTQ080-1  
43CTQ100S  
43CTQ100-1  
SYMBOL  
UNITS  
Maximum DC reverse voltage  
VR  
80  
100  
V
Maximum working peak reverse voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Maximum average  
forward current  
See fig. 5  
per leg  
20  
40  
IF(AV)  
50 % duty cycle at TC = 135 °C, rectangular waveform  
per device  
A
Maximum peak one cycle non-repetitive  
surge current per leg  
See fig. 7  
Following any rated load  
condition and with rated  
5 µs sine or 3 µs rect. pulse  
10 ms sine or 6 ms rect. pulse  
850  
IFSM  
275  
VRRM applied  
Non-repetitive avalanche energy per leg  
Repetitive avalanche current per leg  
EAS  
IAR  
TJ = 25 °C, IAS = 0.50 A, L = 60 mH  
7.50  
mJ  
A
Current decaying linearly to zero in 1 µs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
0.50  
Document Number: 93346  
Revision: 21-Aug-08  
For technical questions, contact: diodes-tech@vishay.com  
www.vishay.com  
1

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