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43CTQ100-1PBF PDF预览

43CTQ100-1PBF

更新时间: 2024-11-04 06:27:27
品牌 Logo 应用领域
威世 - VISHAY 整流二极管
页数 文件大小 规格书
6页 131K
描述
Schottky Rectifier, 2 x 20 A

43CTQ100-1PBF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-262AA包装说明:ROHS COMPLIANT, PLASTIC, TO-262, 3 PIN
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.22Is Samacsys:N
其他特性:FREE WHEELING DIODE应用:GENERAL PURPOSE
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.67 VJEDEC-95代码:TO-262AA
JESD-30 代码:R-PSIP-T3最大非重复峰值正向电流:850 A
元件数量:2相数:1
端子数量:3最高工作温度:175 °C
最低工作温度:-55 °C最大输出电流:20 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:100 V
子类别:Rectifier Diodes表面贴装:NO
技术:SCHOTTKY端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

43CTQ100-1PBF 数据手册

 浏览型号43CTQ100-1PBF的Datasheet PDF文件第2页浏览型号43CTQ100-1PBF的Datasheet PDF文件第3页浏览型号43CTQ100-1PBF的Datasheet PDF文件第4页浏览型号43CTQ100-1PBF的Datasheet PDF文件第5页浏览型号43CTQ100-1PBF的Datasheet PDF文件第6页 
43CTQ...SPbF/43CTQ...-1PbF  
Vishay High Power Products  
Schottky Rectifier, 2 x 20 A  
43CTQ...-1PbF  
FEATURES  
43CTQ...SPbF  
• 175 °C TJ operation  
Available  
• Center tap configuration  
• Low forward voltage drop  
RoHS*  
COMPLIANT  
• High  
purity,  
high  
temperature  
epoxy  
encapsulation for enhanced mechanical strength and  
moisture resistance  
Base  
common  
cathode  
Base  
common  
cathode  
• High frequency operation  
2
2
• Guard ring for enhanced ruggedness and long term  
reliability  
• Lead (Pb)-free (“PbF” suffix)  
• Designed and qualified for Q101 level  
2
2
1
1
3
3
Common  
Common  
cathode  
Anode  
Anode  
Anode  
Anode  
cathode  
DESCRIPTION  
D2PAK  
TO-262  
This center tap Schottky rectifier series has been optimized  
for low reverse leakage at high temperature. The proprietary  
barrier technology allows for reliable operation up to 175 °C  
junction temperature. Typical applications are in switching  
power supplies, freewheeling diodes, and reverse battery  
protection.  
PRODUCT SUMMARY  
IF(AV)  
2 x 20 A  
80/100 V  
VR  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
40  
UNITS  
Rectangular waveform  
A
V
80/100  
850  
tp = 5 µs sine  
A
VF  
20 Apk, TJ = 125 °C (per leg)  
Range  
0.67  
V
TJ  
- 55 to 175  
°C  
VOLTAGE RATINGS  
PARAMETER  
43CTQ080SPbF  
43CTQ080-1PbF  
43CTQ100SPbF  
43CTQ100-1PbF  
SYMBOL  
UNITS  
Maximum DC reverse voltage  
VR  
80  
100  
V
Maximum working peak reverse voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Maximum average  
forward current  
See fig. 5  
per leg  
20  
40  
IF(AV)  
50 % duty cycle at TC = 135 °C, rectangular waveform  
per device  
A
Maximum peak one cycle non-repetitive  
surge current per leg  
See fig. 7  
Following any rated load  
condition and with rated  
5 µs sine or 3 µs rect. pulse  
10 ms sine or 6 ms rect. pulse  
850  
IFSM  
275  
VRRM applied  
Non-repetitive avalanche energy per leg  
Repetitive avalanche current per leg  
EAS  
IAR  
TJ = 25 °C, IAS = 0.50 A, L = 60 mH  
7.50  
mJ  
A
Current decaying linearly to zero in 1 µs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
0.50  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 94224  
Revision: 29-Jul-08  
For technical questions, contact: diodes-tech@vishay.com  
www.vishay.com  
1

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