Datasheet > 3N166

3N166

更新时间： 2024-02-24 14:38:42

品牌	Logo	应用领域
Linear Systems		晶体晶体管输入元件放大器
页数	文件大小	规格书
2页	21K
描述
MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

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技术参数
数据手册

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3N166 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.37	Is Samacsys：	N
配置：	SEPARATE, 2 ELEMENTS	最大漏极电流 (Abs) (ID)：	0.05 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JEDEC-95代码：	TO-99
JESD-30 代码：	O-MBCY-W8	元件数量：	2
端子数量：	8	工作模式：	ENHANCEMENT MODE
最高工作温度：	200 °C	封装主体材料：	METAL
封装形状：	ROUND	封装形式：	CYLINDRICAL
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	P-CHANNEL
最大功率耗散 (Abs)：	0.3 W	认证状态：	Not Qualified
子类别：	Other Transistors	表面贴装：	NO
端子形式：	WIRE	端子位置：	BOTTOM
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管元件材料：	SILICON
Base Number Matches：	1

3N166 数据手册

MATCHING CHARACTERISTICS 3N165

LIMITS

SYMBOL

Y_fs1/Y_fs2

V_GS1-2

CHARACTERISTICS

MIN. MAX. UNITS

CONDITIONS

I_D= -500 µA

I_A= -500 µA

Forward Transconductance Ratio

Gate Source Threshold Voltage Differential

0.90

1.0

100

V_DS= -15 V

f=1kHz

∆V_GS1-2/∆T Gate Source Threshold Voltage Differential

µV/°C V_DS= -15 V

Change with Temperature

T_A= -55°C to = +25°C

TYPICAL SWITCHING WAVEFORM

V_DD

10%

R₁

t_r

t_on

90%

10%

R₂

V_OUT

10%

t_off

Ω

INPUT PULSE

SAMPLING SCOPE

≤

T_r0.2ns

≤

Rise Time 2ns

2pF

≤

≥

Pulse Width 200ns

≥

10M

Switching Times Test Circuit

NOTES:

1. MOS field-effect transistors have extremely high input resistance and can be damaged by the accumulation of excess static

charge. To avoid possible damage to the device while wiring, testing, or in actual operation, follow these procedures:

To avoid the build-up of static charge, the leads of the devices should remain shorted together with a metal ring except when

being tested or used. Avoid unnecessary handling. Pick up devices by the case instead of the leads. Do not insert or remove

devices from circuits with the power on, as transient voltages may cause permanant damage to the devices.

2. Per transistor.

3. Devices must mot be tested at ±125V more than once, nor for longer than 300ms.

4. For design reference only, not 100% tested.

Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress

ratings only and functional operation of the device at these or any other conditions above those indicated in the operational

sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect

device reliability.

Linear Integrated Systems 4042 Clipper Ct., Fremont, CA 94538 TEL: (510) 490-9160 • FAX: (510) 353-0261

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