Datasheet > 3CA753G(TO-251)

3CA753G(TO-251)

更新时间： 2024-11-13 07:48:07

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
2页	103K
描述
Transistor

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数据手册

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3CA753G(TO-251) 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-251/TO-252-2L Plastic-Encapsulate Transistors

3CA753 TRANSISTOR (PNP)

TO-251

TO-252-2L

FEATURES

Power dissipation

1 2 3

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

1.BASE

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Units

2.COLLECTOR

3.EMITTER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

-40

-30

-5

Collector Current -Continuous

Collector power dissipation

Junction Temperature

Storage Temperature

-2

P_C

1.2

℃

T_J

150

-55-150

T_stg

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

-40

-30

-5

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=-100µA,I_E=0

V_(BR)CEOI_C=-10mA,I_B=0

V_(BR)EBOI_E=-1mA,I_C=0

I_CBO

I_EBO

V_CB=-40V,I_E=0

-0.1

400

-0.8

-2

µA

Emitter cut-off current

V_EB=-5V,I_C=0

DC current gain

h_FE

V_CE=-2V,I_C=-500mA

I_C=-2A,I_B=-200mA

I_C=-1.5A,I_B=-30mA

V_CE=-5V,I_C=-500mA

V_CB=-10V,I_E=0,f=1MHz

100

V_CE(sat)

f_T

Collector-emitter saturation voltage

Transition frequency

120

MHz

Collector output capacitance

C_ob

CLASSIFICATION OF h_FE

Rank

Range

100-200

160-320

200-400

Marking

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