Datasheet > 3CA8772Y

3CA8772Y

更新时间： 2024-11-13 04:58:07

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
1页	103K
描述
Transistor

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中文翻译

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数据手册

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3CA8772Y 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-126 Plastic-Encapsulate Transistors

3CA8772 TRANSISTOR (PNP)

TO – 126

FEATURES

1. EMITTER

2. COLLECTOR

3. BASE

High Current

Low Voltage

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

-40

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

-30

-6

Collector Current

-3

P_C

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

1.25

100

R_θJA

T_j

℃/W

℃

150

T_stg

Storage Temperature

-55~+150

℃

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test

conditions

Min

-40

-30

-6

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C=-100µA,I_E=0

I_C=-10mA,I_B=0

I_E=-100µA,I_C=0

V_CB=-40V,I_E=0

-10

400

-0.5

μA

Collector cut-off current

I_CEO

V_CE=-30V,I_B=0

Emitter cut-off current

I_EBO

V_EB=-6V,I_C=0

DC current gain

h_FE

V_CE=-2V, I_C=-1A

I_C=-2A,I_B=-0.2A

V_CE=-5V,I_C=-0.1A, f=10MHz

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)

f_T

MHz

CLASSIFICATION OF h_FE

RANK

RANGE

60-120

100-200

160-320

200-400

A,Dec,2010

中文翻译

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