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30CTH02-1TRR PDF预览

30CTH02-1TRR

更新时间: 2024-11-06 06:18:27
品牌 Logo 应用领域
威世 - VISHAY 二极管超快速恢复二极管
页数 文件大小 规格书
7页 122K
描述
Hyperfast Rectifier, 2 x 15 A FRED PtTM

30CTH02-1TRR 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-262AA包装说明:R-PSIP-T3
针数:3Reach Compliance Code:unknown
HTS代码:8541.10.00.80风险等级:5.46
其他特性:FREE WHEELING DIODE应用:HYPER FAST RECOVERY
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:TO-262AAJESD-30 代码:R-PSIP-T3
最大非重复峰值正向电流:200 A元件数量:2
相数:1端子数量:3
最高工作温度:175 °C最低工作温度:-65 °C
最大输出电流:15 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:200 V最大反向恢复时间:0.035 µs
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

30CTH02-1TRR 数据手册

 浏览型号30CTH02-1TRR的Datasheet PDF文件第2页浏览型号30CTH02-1TRR的Datasheet PDF文件第3页浏览型号30CTH02-1TRR的Datasheet PDF文件第4页浏览型号30CTH02-1TRR的Datasheet PDF文件第5页浏览型号30CTH02-1TRR的Datasheet PDF文件第6页浏览型号30CTH02-1TRR的Datasheet PDF文件第7页 
30CTH02S/30CTH02-1  
Vishay High Power Products  
Hyperfast Rectifier,  
2 x 15 A FRED PtTM  
FEATURES  
30CTH02S  
30CTH02-1  
• Hyperfast recovery time  
• Low forward voltage drop  
• Low leakage current  
• 175 °C operating junction temperature  
• Designed and qualified for industrial level  
Base  
Common  
Cathode  
Base  
Common  
Cathode  
2
2
DESCRIPTION/APPLICATIONS  
Vishay HPP‘s 200 V series are the state of the art hyperfast  
recovery rectifiers designed with optimized performance of  
forward voltage drop and hyperfast recovery time.  
The planar structure and the platinum doped life time  
control, guarantee the best overall performance,  
ruggedness and reliability characteristics.  
2
2
Common  
Common  
Cathode  
Cathode  
1
3
1
3
Anode  
Anode  
Anode  
Anode  
D2PAK  
TO-262  
These devices are intended for use in the output rectification  
stage of SMPS, UPS, dc-to-dc converters as well as  
freewheeling diode in low voltage inverters and chopper  
motor drives.  
PRODUCT SUMMARY  
trr (maximum)  
30 ns  
Their extremely optimized stored charge and low recovery  
current minimize the switching losses and reduce over  
dissipation in the switching element and snubbers.  
IF(AV)  
VR  
2 x 15 A  
200 V  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
TC = 159 °C  
MAX.  
200  
UNITS  
Peak repetitive reverse voltage  
VRRM  
V
per diode  
Average rectified forward current  
per device  
15  
IF(AV)  
30  
A
Non-repetitive peak surge current  
IFSM  
TC = 25 °C  
200  
Operating junction and storage temperatures  
TJ, TStg  
- 65 to 175  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Breakdown voltage,  
blocking voltage  
VBR  
VR  
,
IR = 100 µA  
IF = 15 A  
200  
-
-
V
-
-
-
-
-
-
0.92  
0.78  
-
1.05  
0.85  
10  
300  
-
Forward voltage  
VF  
IR  
V
IF = 15 A, TJ = 125 °C  
VR = VR rated  
Reverse leakage current  
µA  
TJ = 125 °C, VR = VR rated  
VR = 200 V  
5
Junction capacitance  
Series inductance  
CT  
LS  
57  
8
pF  
nH  
Measured lead to lead 5 mm from package body  
-
Document Number: 93931  
Revision: 08-Sep-08  
For technical questions, contact: diodes-tech@vishay.com  
www.vishay.com  
1

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