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30BQ015 PDF预览

30BQ015

更新时间: 2024-11-20 06:17:55
品牌 Logo 应用领域
威世 - VISHAY 整流二极管光电二极管
页数 文件大小 规格书
6页 102K
描述
Schottky Rectifier, 3.0 A

30BQ015 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:DO-214AB
包装说明:PLASTIC, SMC, SIMILAR TO DO-214AB, 2 PIN针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.2
Is Samacsys:N其他特性:HIGH RELIABILITY, FREE WHEELING DIODE
应用:GENERAL PURPOSE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.3 VJEDEC-95代码:DO-214AB
JESD-30 代码:R-PDSO-C2JESD-609代码:e0
最大非重复峰值正向电流:650 A元件数量:1
相数:1端子数量:2
最高工作温度:125 °C最低工作温度:-55 °C
最大输出电流:4 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:15 V子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子面层:TIN LEAD端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

30BQ015 数据手册

 浏览型号30BQ015的Datasheet PDF文件第2页浏览型号30BQ015的Datasheet PDF文件第3页浏览型号30BQ015的Datasheet PDF文件第4页浏览型号30BQ015的Datasheet PDF文件第5页浏览型号30BQ015的Datasheet PDF文件第6页 
30BQ015PbF  
Vishay High Power Products  
Schottky Rectifier, 3.0 A  
FEATURES  
• 125 °C TJ operation (VR < 5 V)  
• Optimized for OR-ing applications  
• Ultra low forward voltage drop  
• High frequency operation  
Available  
RoHS*  
COMPLIANT  
• Guard ring for enhanced ruggedness and long term  
reliability  
Cathode  
Anode  
• High purity, high temperature epoxy encapsulation for  
enhanced mechanical strength and moisture resistance  
SMC  
• Lead (Pb)-free (“PbF” suffix)  
• Designed and qualified for industrial level  
DESCRIPTION  
PRODUCT SUMMARY  
The 30BQ015PbF surface mount Schottky rectifier has  
been designed for applications requiring low forward drop  
and very small foot prints on PC boards. The proprietary  
barrier technology allows for reliable operation up to 125 °C  
junction temperature. Typical applications are in disk drives,  
switching power supplies, converters, freewheeling diodes,  
battery charging, and reverse battery protection.  
IF(AV)  
3.0 A  
VR  
15 V  
IRM  
50 mA at 100 °C  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
3.0  
UNITS  
Rectangular waveform  
A
V
15  
tp = 5 µs sine  
1.0 Apk, TJ = 75 °C  
Range  
650  
A
VF  
0.30  
V
TJ  
- 55 to 125  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VR  
30BQ015PbF  
UNITS  
Maximum DC reverse voltage  
15  
25  
V
Maximum working peak reverse voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
50 % duty cycle at TL = 83 °C, rectangular waveform  
50 % duty cycle at TL = 78 °C, rectangular waveform  
3.0  
4.0  
Maximum average forward current  
IF(AV)  
A
Following any rated  
load condition and with  
rated VRRM applied  
5 µs sine or 3 µs rect. pulse  
650  
Maximum peak one cycle  
non-repetitive surge current  
IFSM  
10 ms sine or 6 ms rect. pulse  
75  
Non-repetitive avalanche energy  
Repetitive avalanche current  
EAS  
IAR  
TJ = 25 °C, IAS = 0.5 A, L = 12 mH  
1.5  
mJ  
A
Current decaying linearly to zero in 1 µs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
0.5  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 94178  
Revision: 14-Aug-08  
For technical questions, contact: diodes-tech@vishay.com  
www.vishay.com  
1

30BQ015 替代型号

型号 品牌 替代类型 描述 数据表
VS-30BQ015-M3/9AT VISHAY

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DIODE 4 A, 15 V, SILICON, RECTIFIER DIODE, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMC,
VS-30BQ015TRPBF VISHAY

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30BQ015 MICROSEMI

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