Datasheet > 30BQ015PBF_11

30BQ015PBF_11

更新时间： 2024-11-20 07:39:43

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	117K
描述
Schottky Rectifier, 3.0 A

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30BQ015PBF_11 数据手册

VS-30BQ015PbF

Vishay Semiconductors

Schottky Rectifier, 3.0 A

FEATURES

• 125 °C T_Joperation (V_R< 5 V)

• Optimized for OR-ing applications

• Ultralow forward voltage drop

• High frequency operation

Cathode

Anode

SMC

• Guard ring for enhanced ruggedness and long term

reliability

• High purity, high temperature epoxy encapsulation for

enhanced mechanical strength and moisture resistance

PRODUCT SUMMARY

• Meets MSL level 1, per J-STD-020, LF maximum peak of

260 °C

Package

SMC

3 A

• Compliant to RoHS Directive 2002/95/EC

• Designed and qualified for industrial level

I_F(AV)

V_R

15 V

0.3 V

V_Fat I_F

I_RM

DESCRIPTION

50 mA at 100 °C

125 °C

The VS-30BQ015PbF surface mount Schottky rectifier has

been designed for applications requiring low forward drop

and very small foot prints on PC boards. The proprietary

barrier technology allows for reliable operation up to 125 °C

junction temperature. Typical applications are in disk drives,

switching power supplies, converters, freewheeling diodes,

battery charging, and reverse battery protection.

T_Jmax.

Diode variation

E_AS

Single die

1.5 mJ

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

I_F(AV)

V_RRM

I_FSM

CHARACTERISTICS

VALUES

3.0

UNITS

Rectangular waveform

t_p= 5 μs sine

1.0 Apk, T_J= 75 °C

Range

650

V_F

0.30

T_J

- 55 to 125

°C

VOLTAGE RATINGS

PARAMETER

SYMBOL

VS-30BQ015PbF

UNITS

Maximum DC reverse voltage

Maximum working peak reverse voltage

V_R

V_RWM

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

50 % duty cycle at T_L= 83 °C, rectangular waveform

50 % duty cycle at T_L= 78 °C, rectangular waveform

3.0

4.0

Maximum average forward current

I_F(AV)

Following any rated

load condition and with

rated V_RRMapplied

5 μs sine or 3 μs rect. pulse

650

Maximum peak one cycle

non-repetitive surge current

I_FSM

10 ms sine or 6 ms rect. pulse

Non-repetitive avalanche energy

Repetitive avalanche current

E_AS

I_AR

T_J= 25 °C, I_AS= 0.5 A, L = 12 mH

1.5

Current decaying linearly to zero in 1 μs

Frequency limited by T_Jmaximum V_A= 1.5 x V_Rtypical

0.5

Document Number: 94178

Revision: 23-Feb-11

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

12 3 4 5 6 7

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