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30BQ040-9AT PDF预览

30BQ040-9AT

更新时间: 2024-11-24 07:39:43
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
6页 101K
描述
Schottky Rectifier, 3.0 A

30BQ040-9AT 数据手册

 浏览型号30BQ040-9AT的Datasheet PDF文件第2页浏览型号30BQ040-9AT的Datasheet PDF文件第3页浏览型号30BQ040-9AT的Datasheet PDF文件第4页浏览型号30BQ040-9AT的Datasheet PDF文件第5页浏览型号30BQ040-9AT的Datasheet PDF文件第6页 
VS-30BQ040-M3  
Vishay Semiconductors  
Schottky Rectifier, 3.0 A  
FEATURES  
• Very low forward voltage drop  
• Guard ring for enhanced ruggedness and long  
term reliability  
Cathode  
Anode  
• Halogen-free according to IEC 61249-2-21  
definition  
SMC  
• Small foot print, surface mountable  
• High frequency operation  
PRODUCT SUMMARY  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
Package  
SMC  
3.0 A  
40 V  
IF(AV)  
• Compliant to RoHS directive 2002/95/EC  
VR  
DESCRIPTION  
VF at IF  
IRM  
0.46 V  
The VS-30BQ040-M3 surface mount Schottky rectifier has  
been designed for applications requiring low forward drop  
and small foot prints on PC boards. Typical applications are  
in disk drives, switching power supplies, converters,  
freewheeling diodes, battery charging, and reverse battery  
protection.  
30 mA at 125 °C  
150 °C  
TJ max.  
Diode variation  
EAS  
Single die  
6.0 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
3.0  
UNITS  
Rectangular waveform  
A
V
40  
tp = 5 μs sine  
3.0 Apk, TJ = 125 °C  
Range  
2000  
A
VF  
0.43  
V
TJ  
- 55 to 150  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VS-30BQ040-M3  
UNITS  
Maximum DC reverse voltage  
Maximum working peak reverse voltage  
VR  
40  
V
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
50 % duty cycle at TL = 115 °C, rectangular waveform  
50 % duty cycle at TL = 104 °C, rectangular waveform  
3.0  
4.0  
Maximum average forward current  
IF(AV)  
A
Following any rated  
load condition and with  
rated VRRM applied  
5 μs sine or 3 μs rect. pulse  
1600  
Maximum peak one cycle  
non-repetitive surge current  
IFSM  
10 ms sine or 6 ms rect. pulse  
90  
Non-repetitive avalanche energy  
Repetitive avalanche current  
EAS  
IAR  
TJ = 25 °C, IAS = 1.0 A, L = 12 mH  
6.0  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
1.0  
Document Number: 93332  
Revision: 07-Sep-10  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1

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