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30-PT07NIA600S501-PD60F58Y PDF预览

30-PT07NIA600S501-PD60F58Y

更新时间: 2023-09-03 20:25:24
品牌 Logo 应用领域
VINCOTECH /
页数 文件大小 规格书
29页 8713K
描述
High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage

30-PT07NIA600S501-PD60F58Y 数据手册

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30-PT07NIA600S501-PD60F58Y  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
Buck Diode  
Static  
25  
1,53  
1,48  
1,46  
1,92(1)  
VF  
IR  
Forward voltage  
375  
125  
150  
V
Reverse leakage current  
Thermal  
Vr = 650 V  
25  
19  
µA  
λpaste = 3,4 W/mK  
(PSX)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
Dynamic  
0,3  
K/W  
25  
107,47  
147,5  
166,49  
86,78  
108,36  
118,17  
6,1  
IRM  
Peak recovery current  
125  
150  
25  
A
trr  
Reverse recovery time  
125  
150  
25  
ns  
di/dt=3922 A/µs  
di/dt=3987 A/µs  
di/dt=3684 A/µs  
Qr  
Recovered charge  
±15  
350  
475  
125  
150  
25  
10,84  
13,24  
1,29  
μC  
Erec  
Reverse recovered energy  
Peak rate of fall of recovery current  
125  
150  
25  
2,34  
mWs  
A/µs  
2,91  
3339,33  
4487,66  
4481,07  
(dirf/dt)max  
125  
150  
Copyright Vincotech  
5
12 Aug. 2022 / Revision 2  

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