RoHS
30PT Series RoHS
SEMICONDUCTOR
Stansard SCRs, 30A
A2
Main Features
Symbol
Value
30
Unit
1
2
3
IT(RMS)
A
A1
A2
G
VDRM/VRRM
IGT
V
600 to 1600
4 to 50
TO-220AB (non-Insulated)
TO-220AB (lnsulated)
(30PTxxA)
(30PTxxAI)
mA
A2
DESCRIPTION
The 30PT series of silicon controlled rectifiers are
high performance glass passivated technology,
and are suitable for general purpose applications,
where power dissipation are critical such as solid
state relay, welding equipment and high power
A1
A2
G
A1
A2
G
TO-3P (non-Insulated)
TO-3P (Insulated)
(30PTxxB)
(30PTxxBI)
control.
Base on a clip assembly technology, they offer a
superior performance in surge current capabilities.
A2
A1
A2
2
(A2)
G
TO-263 (D2PAK)
(30PTxxH)
TO-247AB
(30PTxxC)
(G)3
1(A1)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUE
UNIT
Tc=100°C
Tc=95°C
Tc=80°C
Tc=100°C
Tc=95°C
Tc=80°C
TO-3P/TO-247AB
RMS on-state current full sine wave
IT(RMS)
TO-220AB/TO-263
TO-220AB insulated/TO-3P insulated
TO-3P/TO-247AB
30
A
(180° conduction angle )
Average on-state current
(180° conduction angle)
A
IT(AV)
TO-220AB/TO-263
TO-220AB insulated/TO-3P insulated
F =50 Hz
19
t = 20 ms
400
Non repetitive surge peak on-state
ITSM
A
current (full cycle, T initial = 25°C)
j
F =60 Hz
t = 16.7 ms
420
800
I2t Value for fusing
A2s
A/µs
I2t
tp = 10 ms
Critical rate of rise of on-state current
IG = 2xlGT, tr≤100ns
Tj = 125ºC
dI/dt
IGM
F = 60 Hz
50
Tp = 20 µs
Tp =20µs
Tj =125ºC
Tj = 125ºC
Tj = 125ºC
Peak gate current
4
10
1
A
PGM
PG(AV)
VDRM
Maximum gate power
W
W
Average gate power dissipation
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Storage temperature range
Tj =125ºC
600 to 1600
V
VRRM
Tstg
Tj
- 40 to + 150
- 40 to + 125
5
ºC
V
Operating junction temperature range
Maximum peak reverse gate voltage VRGM
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