Datasheet > 30PT10BI

30PT10BI

更新时间： 2022-09-18 13:56:05

品牌	Logo	应用领域
尼尔 - NELLSEMI		可控硅
页数	文件大小	规格书
6页	885K
描述
Stansard SCRs, 30A

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30PT10BI 数据手册

RoHS

30PT Series _RoHS

SEMICONDUCTOR

Stansard SCRs, 30A

Main Features

Symbol

Value

Unit

I_T(RMS)

V_DRM/V_RRM

I_GT

600 to 1600

4 to 50

TO-220AB (non-Insulated)

TO-220AB (lnsulated)

(30PTxxA)

(30PTxxAI)

DESCRIPTION

The 30PT series of silicon controlled rectifiers are

high performance glass passivated technology,

and are suitable for general purpose applications,

where power dissipation are critical such as solid

state relay, welding equipment and high power

TO-3P (non-Insulated)

TO-3P (Insulated)

(30PTxxB)

(30PTxxBI)

control.

Base on a clip assembly technology, they offer a

superior performance in surge current capabilities.

(A2)

TO-263 (D²PAK)

(30PTxxH)

TO-247AB

(30PTxxC)

(G)3

1(A1)

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUE

UNIT

T_c=100°C

T_c=95°C

T_c=80°C

T_c=100°C

T_c=95°C

T_c=80°C

TO-3P/TO-247AB

RMS on-state current full sine wave

I_T(RMS)

TO-220AB/TO-263

TO-220AB insulated/TO-3P insulated

TO-3P/TO-247AB

(180° conduction angle )

Average on-state current

(180° conduction angle)

I_T(AV)

TO-220AB/TO-263

TO-220AB insulated/TO-3P insulated

F =50 Hz

t = 20 ms

400

Non repetitive surge peak on-state

I_TSM

current (full cycle, T initial = 25°C)

F =60 Hz

t = 16.7 ms

420

800

I²t Value for fusing

A²s

A/µs

I²t

t_p= 10 ms

Critical rate of rise of on-state current

I_G= 2xl_GT, t_r≤100ns

T_j= 125ºC

dI/dt

I_GM

F = 60 Hz

T_p= 20 µs

T_p=20µs

T_j=125ºC

T_j= 125ºC

Peak gate current

P_GM

P_G(AV)

V_DRM

Maximum gate power

Average gate power dissipation

Repetitive peak off-state voltage

Repetitive peak reverse voltage

Storage temperature range

T_j=125ºC

600 to 1600

V_RRM

T_stg

T_j

- 40 to + 150

- 40 to + 125

ºC

Operating junction temperature range

Maximum peak reverse gate voltage V_RGM

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