Datasheet > 30-PT07NIA600S501-PD60F58Y

30-PT07NIA600S501-PD60F58Y

更新时间： 2023-09-03 20:25:24

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
29页	8713K
描述
High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage

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30-PT07NIA600S501-PD60F58Y

datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_GE[V]

V_GS[V]

Min

Max

V_F[V]

I_F[A]

Buck Switch

Static

V_GE(th)

Gate-emitter threshold voltage

V_CE= V_GE

0,006

600

3,25

1,15

4,75

1,24

1,7

1,8⁽¹⁾

V_CEsat

Collector-emitter saturation voltage

125

150

1,75

I_CES

I_GES

r_g

Collector-emitter cut-off current

Gate-emitter leakage current

Internal gate resistance

Input capacitance

650

150

600

µA

None

34200

990

C_ies

C_oes

C_res

Q_g

Output capacitance

f = 1 Mhz

Reverse transfer capacitance

Gate charge

115,8

2520

V_CC= 400 V

±15

600

Thermal

λ_paste= 3,4 W/mK

(PSX)

(2)

R_th(j-s)

Thermal resistance junction to sink

Dynamic

0,19

K/W

478,53

540,72

474,65

92,33

94,24

95,2

t_d(on)

Turn-on delay time

Rise time

125

150

t_r

125

150

R_gon= 8 Ω

R_goff= 16 Ω

592,34

619,14

626,24

59,4

t_d(off)

Turn-off delay time

Fall time

125

150

±15

350

475

t_f

125

150

54,48

51,64

9,91

Q_rFWD=6,1 µC

E_on

Turn-on energy (per pulse)

Turn-off energy (per pulse)

Q_rFWD=10,84 µC

Q_rFWD=13,24 µC

125

150

10,16

10,35

19,65

19,44

19,81

mWs

E_off

125

150

12 Aug. 2022 / Revision 2

1 2 345 6 7...29

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