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30PT100_11 PDF预览

30PT100_11

更新时间: 2022-09-18 13:56:33
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
8页 156K
描述
High Performance Generation 5.0 Schottky Rectifier, 30 A

30PT100_11 数据手册

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VS-30PT100  
Vishay Semiconductors  
www.vishay.com  
High Performance Generation 5.0 Schottky Rectifier, 30 A  
FEATURES  
Base  
cathode  
• 175 °C high performance Schottky diode  
• Very low forward voltage drop  
2
• Extremely low reverse leakage  
• Optimized VF vs. IR trade off for high efficiency  
• Increased ruggedness for reverse avalanche  
capability  
TO-247AC modified  
1
3
• RBSOA available  
Anode  
Cathode  
• Negligible switching losses  
• Submicron trench technology  
• Compliant to RoHS Directive 2002/95/EC  
• Designed and qualified according to JEDEC-JESD47  
PRODUCT SUMMARY  
Package  
TO-247AC modified  
30 A  
APPLICATIONS  
IF(AV)  
• High efficiency SMPS  
VR  
100 V  
• Automotive  
VF at IF  
0.64 V  
• High frequency switching  
• Output rectification  
• Reverse battery protection  
• Freewheeling  
I
RM max.  
15 mA at 125 °C  
175 °C  
TJ max.  
Diode variation  
EAS  
Single die  
135 mJ  
• DC/DC systems  
• Increased power density systems  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
VRRM  
VF  
CHARACTERISTICS  
VALUES  
100  
UNITS  
V
30 Apk, TJ = 125 °C (typical)  
0.61  
TJ  
Range  
- 55 to 175  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
TJ = 25 °C  
VS-30PT100  
UNITS  
Maximum DC reverse voltage  
VR  
100  
V
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
50 % duty cycle at TC = 156 °C, rectangular waveform  
VALUES  
UNITS  
Maximum average forward current  
IF(AV)  
IFSM  
EAS  
IAR  
30  
2200  
450  
135  
Following any rated load  
condition and with rated  
5 µs sine or 3 µs rect. pulse  
10 ms sine or 6 ms rect. pulse  
TJ = 25 °C, IAS = 3 A, L = 30 mH  
A
Maximum peak one cycle  
non-repetitive surge current  
VRRM applied  
Non-repetitive avalanche energy  
Repetitive avalanche current  
mJ  
A
Limited by frequency of operation and time pulse duration so  
that TJ < TJ max. IAS at TJ max. as a function of time pulse  
See fig. 8  
IAS at  
TJ max.  
Revision: 10-Aug-11  
Document Number: 94532  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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