VS-30PT100
Vishay Semiconductors
www.vishay.com
High Performance Generation 5.0 Schottky Rectifier, 30 A
FEATURES
Base
cathode
• 175 °C high performance Schottky diode
• Very low forward voltage drop
2
• Extremely low reverse leakage
• Optimized VF vs. IR trade off for high efficiency
• Increased ruggedness for reverse avalanche
capability
TO-247AC modified
1
3
• RBSOA available
Anode
Cathode
• Negligible switching losses
• Submicron trench technology
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
PRODUCT SUMMARY
Package
TO-247AC modified
30 A
APPLICATIONS
IF(AV)
• High efficiency SMPS
VR
100 V
• Automotive
VF at IF
0.64 V
• High frequency switching
• Output rectification
• Reverse battery protection
• Freewheeling
I
RM max.
15 mA at 125 °C
175 °C
TJ max.
Diode variation
EAS
Single die
135 mJ
• DC/DC systems
• Increased power density systems
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
VRRM
VF
CHARACTERISTICS
VALUES
100
UNITS
V
30 Apk, TJ = 125 °C (typical)
0.61
TJ
Range
- 55 to 175
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
TJ = 25 °C
VS-30PT100
UNITS
Maximum DC reverse voltage
VR
100
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
50 % duty cycle at TC = 156 °C, rectangular waveform
VALUES
UNITS
Maximum average forward current
IF(AV)
IFSM
EAS
IAR
30
2200
450
135
Following any rated load
condition and with rated
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse
TJ = 25 °C, IAS = 3 A, L = 30 mH
A
Maximum peak one cycle
non-repetitive surge current
VRRM applied
Non-repetitive avalanche energy
Repetitive avalanche current
mJ
A
Limited by frequency of operation and time pulse duration so
that TJ < TJ max. IAS at TJ max. as a function of time pulse
See fig. 8
IAS at
TJ max.
Revision: 10-Aug-11
Document Number: 94532
1
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