Datasheet > 30PT100_11

30PT100_11

更新时间： 2022-09-18 13:56:33

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	156K
描述
High Performance Generation 5.0 Schottky Rectifier, 30 A

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数据手册

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30PT100_11 数据手册

VS-30PT100

Vishay Semiconductors

www.vishay.com

ELECTRICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

T_J= 25 °C

TYP.

MAX.

0.77

0.9

UNITS

30 A

60 A

(1)

Forward voltage drop

V_FM

30 A

0.64

0.76

200

T_J= 125 °C

60 A

T_J= 25 °C

T_J= 125 °C

μA

(1)

Reverse leakage current

I_RM

V_R= Rated V_R

Junction capacitance

C_T

L_S

V_R= 5 V_DC(test signal range 100 kHz to 1 MHz) 25 °C

Measured lead to lead 5 mm from package body

Rated V_R

1650

7.5

Series inductance

Maximum voltage rate of change

dV/dt

10 000

V/μs

Note

(1)

Pulse width < 300 μs, duty cycle < 2 %

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum junction and

storage temperature range

T_J, T_Stg

- 55 to 175

°C

Maximum thermal resistance,

junction to case

R_thJC

R_thCS

DC operation

Mounting surface, smooth and greased

0.8

°C/W

Typical thermal resistance,

case to heatsink

0.25

Approximate weight

0.21

oz.

minimum

maximum

6 (5)

12 (10)

kgf · cm

(lbf · in)

Mounting torque

Marking device

Case style TO-247AC modified (JEDEC)

30PT100

Revision: 10-Aug-11

Document Number: 94532

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

123 4 5 6 7 8

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