Datasheet > 30-PT07NIA320RV-LE06F68Y

30-PT07NIA320RV-LE06F68Y

更新时间： 2024-10-29 17:00:43

品牌	Logo	应用领域
VINCOTECH		双极性晶体管
页数	文件大小	规格书
31页	1477K
描述
IGBT fast High efficiency in hard switching and resonant topologies High speed switching Low gate charge

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30-PT07NIA320RV-LE06F68Y /

30-FT07NIA320RV-LE06F68

datasheet

Boost Switching Characteristics

figure 13.

FWD

figure 14.

FWD

Typical rate of fall of forward and reverse recovery current as a function of collector current

Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor

di _F/dt,ꢀdi _rr/dtꢀ=ꢀf(I_C

)

di _F/dt,ꢀdi _rr/dtꢀ=ꢀf(R _gon)

40000

i_F/dt

i_F/

di_rr/dt

di_rr

ꢀ

30000

20000

10000

30000

20000

10000

R_gonꢀꢁΩꢂ

200

400

600

25 °C

800

I_CꢀꢁAꢂ

With an inductive load at

25 °C

V_CEꢀ

350

±15

T_j:

V_CEꢀ

V_GEꢀ=

I_C

350

±15

320

T_j:

125 °C

150 °C

125 °C

150 °C

V_GEꢀ

R _gonꢀ

figure 15.

IGBT

Reverse bias safe operating area

I_Cꢀ=ꢀf(V_CE

)

700

I_CꢀMAX

600

500

400

300

200

100

200

300

400

500

600

700

V_{C Eꢀ}ꢁVꢂ

T_jꢀ=

125

°C

_gonꢀ=

R _goffꢀ=

22 Jan. 2019 / Revision 1

1...23 24 252627 28 29...31

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