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30-PT07NAA300S501-LF64F58Y PDF预览

30-PT07NAA300S501-LF64F58Y

更新时间: 2024-10-29 11:15:11
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VINCOTECH /
页数 文件大小 规格书
33页 8330K
描述
High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage

30-PT07NAA300S501-LF64F58Y 数据手册

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30-PT07NAA300S501-LF64F58Y  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
AC Switch  
Static  
VGE(th)  
Gate-emitter threshold voltage  
VCE = VGE  
0,003  
300  
25  
3,2  
4
4,8  
V
V
25  
1,43  
1,52  
1,55  
1,75(1)  
VCEsat  
Collector-emitter saturation voltage  
15  
125  
150  
ICES  
IGES  
rg  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
Input capacitance  
0
650  
0
25  
25  
200  
400  
µA  
nA  
Ω
20  
None  
18000  
520  
Cies  
Coes  
Cres  
Qg  
pF  
pF  
pF  
nC  
Output capacitance  
f = 1 Mhz  
0
25  
25  
25  
Reverse transfer capacitance  
Gate charge  
68  
VCC = 520 V  
15  
300  
656  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
Dynamic  
0,32  
K/W  
25  
46  
49  
td(on)  
Turn-on delay time  
Rise time  
125  
150  
25  
ns  
ns  
48  
24  
tr  
125  
150  
25  
25  
26  
Rgon = 2 Ω  
Rgoff = 2 Ω  
196  
218  
223  
13,76  
23,79  
27,07  
3,6  
td(off)  
Turn-off delay time  
Fall time  
125  
150  
25  
ns  
0/15  
350  
300  
tf  
125  
150  
25  
ns  
QrFWD=7,4 µC  
Eon  
Turn-on energy (per pulse)  
Turn-off energy (per pulse)  
QrFWD=14,02 µC  
QrFWD=16,46 µC  
125  
150  
25  
4,09  
4,11  
3,03  
5,4  
mWs  
mWs  
Eoff  
125  
150  
5,74  
Copyright Vincotech  
6
28 Apr. 2022 / Revision 3  

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